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Elimination of the acoustoelectric domain and increasing of the emission intensity by means of shunting the lateral current in the InGaAs/GaAs heterostructures

Fuente: arXiv

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Détails bibliographiques
Auteurs principaux:	Belevskii, P. A., Vinoslavskii, M. N., Pylypchuk, O. S.
Format:	Preprint
Publié:	2025
Sujets:	Mesoscale and Nanoscale Physics
Accès en ligne:	Acceder al recurso
Tags:	Ajouter un tag Pas de tags, Soyez le premier à ajouter un tag!

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