Intercalation induced quasi-freestanding layer in TiSe$_2$
Fuente:
arXiv
Enregistré dans:
| Auteurs principaux: | , , , , , , |
|---|---|
| Format: | Preprint |
| Publié: |
2025
|
| Sujets: | |
| Accès en ligne: | |
| Tags: |
Ajouter un tag
Pas de tags, Soyez le premier à ajouter un tag!
|
| _version_ | 1866912689073160192 |
|---|---|
| author | Yilmaz, Turgut Ng, Yi Sheng Rajapitamahuni, Anil Kundu, Asish Wang, Hui-Qiong Zheng, Jin-Cheng Vescovo, Elio |
| author_facet | Yilmaz, Turgut Ng, Yi Sheng Rajapitamahuni, Anil Kundu, Asish Wang, Hui-Qiong Zheng, Jin-Cheng Vescovo, Elio |
| contents | Angle-resolved photoemission spectroscopy is employed to study the electronic structure of bulk TiSe2 before and after doping with potassium impurities. A splitting in the conduction band into two branches is observed after room-temperature deposition. The splitting energy increases to approximately 130 meV when the sample is cooled to 40 K. One branch exhibits a non-dispersive two-dimensional feature, while other one shows the characteristics of three dimensional bulk band dispersion. Core level spectroscopy suggests that the K impurities predominantly occupy the intercalated sites within the van derWaals gap. The results indicate the formation of a quasi-freestandingTiSe2 layer. Additionally, doping completely suppresses the periodic lattice distortion in the surface region. These findings are further supported by density functional theory calculations, which compare the band structure of monolayer and bulk TiSe2 with experimental data. Thus, the dimensional and intrinsic electronic properties of 1T-TiSe2 can be controlled through the intercalation procedure used in this work. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2511_03712 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Intercalation induced quasi-freestanding layer in TiSe$_2$ Yilmaz, Turgut Ng, Yi Sheng Rajapitamahuni, Anil Kundu, Asish Wang, Hui-Qiong Zheng, Jin-Cheng Vescovo, Elio Materials Science Angle-resolved photoemission spectroscopy is employed to study the electronic structure of bulk TiSe2 before and after doping with potassium impurities. A splitting in the conduction band into two branches is observed after room-temperature deposition. The splitting energy increases to approximately 130 meV when the sample is cooled to 40 K. One branch exhibits a non-dispersive two-dimensional feature, while other one shows the characteristics of three dimensional bulk band dispersion. Core level spectroscopy suggests that the K impurities predominantly occupy the intercalated sites within the van derWaals gap. The results indicate the formation of a quasi-freestandingTiSe2 layer. Additionally, doping completely suppresses the periodic lattice distortion in the surface region. These findings are further supported by density functional theory calculations, which compare the band structure of monolayer and bulk TiSe2 with experimental data. Thus, the dimensional and intrinsic electronic properties of 1T-TiSe2 can be controlled through the intercalation procedure used in this work. |
| title | Intercalation induced quasi-freestanding layer in TiSe$_2$ |
| topic | Materials Science |
| url | https://arxiv.org/abs/2511.03712 |