High luminescence efficiency of multi-valley excitonic complexes in heavily doped WSe2 monolayer

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Hauptverfasser: Roux, Sébastien, Guyot, Tilly, Torres-Dias, Abraao Cefas, Lagarde, Delphine, Lombez, Laurent, Van Tuan, Dinh, Kim, Junghwan, Watanabe, Kenji, Marie, Xavier, Taniguchi, Takashi, Dery, Hanan, Robert, Cedric
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Veröffentlicht: 2025
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author Roux, Sébastien
Guyot, Tilly
Torres-Dias, Abraao Cefas
Lagarde, Delphine
Lombez, Laurent
Van Tuan, Dinh
Kim, Junghwan
Watanabe, Kenji
Marie, Xavier
Taniguchi, Takashi
Dery, Hanan
Robert, Cedric
author_facet Roux, Sébastien
Guyot, Tilly
Torres-Dias, Abraao Cefas
Lagarde, Delphine
Lombez, Laurent
Van Tuan, Dinh
Kim, Junghwan
Watanabe, Kenji
Marie, Xavier
Taniguchi, Takashi
Dery, Hanan
Robert, Cedric
contents Monolayers of group-VI transition-metal dichalcogenides (TMDs) are two-dimensional semiconductors that exhibit exceptionally strong light-matter coupling yet typically suffer from low emission quantum yields. In this letter, we investigate the heavily n-doped regime of a WSe$_2$ monolayer and show that multi-particle excitonic complexes produce photoluminescence signals up to two orders of magnitude stronger than in the neutral state. Time-resolved photoluminescence and differential reflectivity measurements reveal that the quantum yield rises with carrier density and exceeds 50% for electron concentrations above 10$^{13}$ cm$^{-2}$. These findings establish TMD monolayers as a platform for exploring excitonic complexes in high-density electron gases and point toward new opportunities for efficient, atomically thin light emitters.
format Preprint
id arxiv_https___arxiv_org_abs_2511_04306
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle High luminescence efficiency of multi-valley excitonic complexes in heavily doped WSe2 monolayer
Roux, Sébastien
Guyot, Tilly
Torres-Dias, Abraao Cefas
Lagarde, Delphine
Lombez, Laurent
Van Tuan, Dinh
Kim, Junghwan
Watanabe, Kenji
Marie, Xavier
Taniguchi, Takashi
Dery, Hanan
Robert, Cedric
Mesoscale and Nanoscale Physics
Materials Science
Monolayers of group-VI transition-metal dichalcogenides (TMDs) are two-dimensional semiconductors that exhibit exceptionally strong light-matter coupling yet typically suffer from low emission quantum yields. In this letter, we investigate the heavily n-doped regime of a WSe$_2$ monolayer and show that multi-particle excitonic complexes produce photoluminescence signals up to two orders of magnitude stronger than in the neutral state. Time-resolved photoluminescence and differential reflectivity measurements reveal that the quantum yield rises with carrier density and exceeds 50% for electron concentrations above 10$^{13}$ cm$^{-2}$. These findings establish TMD monolayers as a platform for exploring excitonic complexes in high-density electron gases and point toward new opportunities for efficient, atomically thin light emitters.
title High luminescence efficiency of multi-valley excitonic complexes in heavily doped WSe2 monolayer
topic Mesoscale and Nanoscale Physics
Materials Science
url https://arxiv.org/abs/2511.04306