kV-Class Lateral NiOx/GaN Super-Heterojunction Diode via Ammonia Molecular Beam Epitaxy (NH3-MBE)
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| Main Authors: | , , , , |
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| Format: | Preprint |
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2025
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| _version_ | 1866908635768029184 |
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| author | Liu, Yizheng Biegler, Zachary J. Wissel-Garcia, Ashley E. Speck, James S. Krishnamoorthy, Sriram |
| author_facet | Liu, Yizheng Biegler, Zachary J. Wissel-Garcia, Ashley E. Speck, James S. Krishnamoorthy, Sriram |
| contents | This work reports the demonstration of lateral p-NiOx/p-GaN/n-GaN-based super-heterojunction (SHJ) diodes using p-GaN with additional sputtered p-type nickel oxide (NiOx) layers to realize charge-balanced structures. The heterojunction diode capacitance-voltage (C-V) model is applied to extract effective the acceptor concentration from the p-NiOx. Net donor and acceptor concentration in n-GaN and p-GaN are extracted by using metal-oxide-semiconductor (MOS) test structures. The fabricated p-NiOx/p-GaN/n-GaN SHJ diodes with charge-balanced region between anode and cathode exhibit a forward on-state current density of 10-30 mA/mm across an anode-to-cathode distance (LAC) from 16 μm to 80 μm. The SHJ diodes show rectifying behavior with a maximum on/off ratio of 10^9 and a low reverse leakage density. The highest breakdown voltage achieved for the SHJ diodes is ~2.8 kV with reverse leakage density of 10^-4 mA/mm at ~80% of devices catastrophic breakdown voltage. The SHJ diodes across all types of dimensions exhibit significant breakdown voltage improvements (~6X on average) with ultra-low reverse leakage current compared to corresponding reference structures without a charge-balanced extension, clearly demonstrating the superjunction effect for devices fabricated on GaN epitaxial layer with ~10^17 cm^-3 electron density. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2511_05060 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | kV-Class Lateral NiOx/GaN Super-Heterojunction Diode via Ammonia Molecular Beam Epitaxy (NH3-MBE) Liu, Yizheng Biegler, Zachary J. Wissel-Garcia, Ashley E. Speck, James S. Krishnamoorthy, Sriram Applied Physics This work reports the demonstration of lateral p-NiOx/p-GaN/n-GaN-based super-heterojunction (SHJ) diodes using p-GaN with additional sputtered p-type nickel oxide (NiOx) layers to realize charge-balanced structures. The heterojunction diode capacitance-voltage (C-V) model is applied to extract effective the acceptor concentration from the p-NiOx. Net donor and acceptor concentration in n-GaN and p-GaN are extracted by using metal-oxide-semiconductor (MOS) test structures. The fabricated p-NiOx/p-GaN/n-GaN SHJ diodes with charge-balanced region between anode and cathode exhibit a forward on-state current density of 10-30 mA/mm across an anode-to-cathode distance (LAC) from 16 μm to 80 μm. The SHJ diodes show rectifying behavior with a maximum on/off ratio of 10^9 and a low reverse leakage density. The highest breakdown voltage achieved for the SHJ diodes is ~2.8 kV with reverse leakage density of 10^-4 mA/mm at ~80% of devices catastrophic breakdown voltage. The SHJ diodes across all types of dimensions exhibit significant breakdown voltage improvements (~6X on average) with ultra-low reverse leakage current compared to corresponding reference structures without a charge-balanced extension, clearly demonstrating the superjunction effect for devices fabricated on GaN epitaxial layer with ~10^17 cm^-3 electron density. |
| title | kV-Class Lateral NiOx/GaN Super-Heterojunction Diode via Ammonia Molecular Beam Epitaxy (NH3-MBE) |
| topic | Applied Physics |
| url | https://arxiv.org/abs/2511.05060 |