Influence of Bi Alloying on GaAs Valence Band Structure
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arXiv
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| Format: | Preprint |
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2025
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| author | Cooper, Joshua J. P. Mitchell, Jared W. Smolenski, Shane Wen, Ming Downey, Eoghan Jozwiak, Chris Bostwick, Aaron Rotenberg, Eli Sun, Kai Zgid, Dominika Jo, Na Hyun Goldman, Rachel S. |
| author_facet | Cooper, Joshua J. P. Mitchell, Jared W. Smolenski, Shane Wen, Ming Downey, Eoghan Jozwiak, Chris Bostwick, Aaron Rotenberg, Eli Sun, Kai Zgid, Dominika Jo, Na Hyun Goldman, Rachel S. |
| contents | Bi alloying is predicted to transform GaAs from a semiconductor to a topological insulator or semi-metal. To date, studies of the GaAs$_{1-x}$Bi$_x$ alloy band structure have been limited, and the origins of Bi-induced enhancement of the spin-orbit splitting energy, $Δ_\mathrm{SO}$, are unresolved. Here, we present high-resolution angle-resolved photoemission spectroscopy (ARPES) of droplet-free epitaxial GaAs$_{1-x}$Bi$_x$ films with $x_{\mathrm{Bi}}$ = 0.06. In addition to quantifying the Bi-induced shifts of the light-hole and heavy-hole valence bands, we probe the origins of the Bi-enhanced $Δ_\mathrm{SO}$. Using exact-two-component density functional theory calculations, we identify the key role of Bi p-orbitals in the upward shift of the light-hole and heavy-hole bands that results in the Bi-enhanced $Δ_\mathrm{SO}$. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2511_05335 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Influence of Bi Alloying on GaAs Valence Band Structure Cooper, Joshua J. P. Mitchell, Jared W. Smolenski, Shane Wen, Ming Downey, Eoghan Jozwiak, Chris Bostwick, Aaron Rotenberg, Eli Sun, Kai Zgid, Dominika Jo, Na Hyun Goldman, Rachel S. Materials Science Bi alloying is predicted to transform GaAs from a semiconductor to a topological insulator or semi-metal. To date, studies of the GaAs$_{1-x}$Bi$_x$ alloy band structure have been limited, and the origins of Bi-induced enhancement of the spin-orbit splitting energy, $Δ_\mathrm{SO}$, are unresolved. Here, we present high-resolution angle-resolved photoemission spectroscopy (ARPES) of droplet-free epitaxial GaAs$_{1-x}$Bi$_x$ films with $x_{\mathrm{Bi}}$ = 0.06. In addition to quantifying the Bi-induced shifts of the light-hole and heavy-hole valence bands, we probe the origins of the Bi-enhanced $Δ_\mathrm{SO}$. Using exact-two-component density functional theory calculations, we identify the key role of Bi p-orbitals in the upward shift of the light-hole and heavy-hole bands that results in the Bi-enhanced $Δ_\mathrm{SO}$. |
| title | Influence of Bi Alloying on GaAs Valence Band Structure |
| topic | Materials Science |
| url | https://arxiv.org/abs/2511.05335 |