Quantum Nanophotonic Interface for Tin-Vacancy Centers in Thin-Film Diamond
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arXiv
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| Autores principales: | , , , , , , , , , , , , |
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| Formato: | Preprint |
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2025
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| author | Lee, Hope Kleidermacher, Hannah C. Stein, Abigail J. M. Oh, Hyunseok Wyatt, Lillian B. Hughes Kim, Casey K. Basso, Luca Mounce, Andrew M. Wang, Yongqiang Su, Shei S. Titze, Michael Jayich, Ania C. Bleszynski Vučković, Jelena |
| author_facet | Lee, Hope Kleidermacher, Hannah C. Stein, Abigail J. M. Oh, Hyunseok Wyatt, Lillian B. Hughes Kim, Casey K. Basso, Luca Mounce, Andrew M. Wang, Yongqiang Su, Shei S. Titze, Michael Jayich, Ania C. Bleszynski Vučković, Jelena |
| contents | The negatively charged tin-vacancy center in diamond (SnV$^-$) is an excellent solid state qubit with optically-addressable transitions and a long electron spin coherence time at elevated ($\sim1.7$ K). However, implementing scalable quantum nodes with high-fidelity optical readout of the electron spin state requires efficient photon emission and collection from the system. In this manuscript, we report a quantum photonic interface for SnV$^-$ centers based on one-dimensional photonic crystal cavities fabricated in diamond thin films. Furthermore, we provide a rigorous description of the spontaneous emission dynamics of our system, taking into account individual contributions from both the C and D transitions of the emitter. This allows for determination of Purcell factors per transition and, by extension, the C/D branching ratio SnV$^{-}$ zero phonon line. We observe quality factors up to $\sim$6000 across this sample, and measure up to a 12-fold lifetime reduction, which translates into a Purcell factor of $F_C=26.2\pm1.5$ for a targeted C transition. By considering the cavity mode polarization alignment with the C and D transition dipole moments, we validate the C/D branching ratio to be $η_{\text{BR}}=0.75\pm0.01$, in line with previous theoretical and experimental findings. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2511_05740 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Quantum Nanophotonic Interface for Tin-Vacancy Centers in Thin-Film Diamond Lee, Hope Kleidermacher, Hannah C. Stein, Abigail J. M. Oh, Hyunseok Wyatt, Lillian B. Hughes Kim, Casey K. Basso, Luca Mounce, Andrew M. Wang, Yongqiang Su, Shei S. Titze, Michael Jayich, Ania C. Bleszynski Vučković, Jelena Quantum Physics Optics The negatively charged tin-vacancy center in diamond (SnV$^-$) is an excellent solid state qubit with optically-addressable transitions and a long electron spin coherence time at elevated ($\sim1.7$ K). However, implementing scalable quantum nodes with high-fidelity optical readout of the electron spin state requires efficient photon emission and collection from the system. In this manuscript, we report a quantum photonic interface for SnV$^-$ centers based on one-dimensional photonic crystal cavities fabricated in diamond thin films. Furthermore, we provide a rigorous description of the spontaneous emission dynamics of our system, taking into account individual contributions from both the C and D transitions of the emitter. This allows for determination of Purcell factors per transition and, by extension, the C/D branching ratio SnV$^{-}$ zero phonon line. We observe quality factors up to $\sim$6000 across this sample, and measure up to a 12-fold lifetime reduction, which translates into a Purcell factor of $F_C=26.2\pm1.5$ for a targeted C transition. By considering the cavity mode polarization alignment with the C and D transition dipole moments, we validate the C/D branching ratio to be $η_{\text{BR}}=0.75\pm0.01$, in line with previous theoretical and experimental findings. |
| title | Quantum Nanophotonic Interface for Tin-Vacancy Centers in Thin-Film Diamond |
| topic | Quantum Physics Optics |
| url | https://arxiv.org/abs/2511.05740 |