Crossover from quantum correlation to hot-carrier transport in scattering-tolerant 2D transistors
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arXiv
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| Autori principali: | , , , , , , , , |
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| Natura: | Preprint |
| Pubblicazione: |
2025
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| author | Daw, Debottam Bouzid, Houcine Lee, Sung-Gyu Cha, Wujoon Kim, Ki Kang Joo, Min-kyu Wang, Yan Chhowalla, Manish Lee, Young Hee |
| author_facet | Daw, Debottam Bouzid, Houcine Lee, Sung-Gyu Cha, Wujoon Kim, Ki Kang Joo, Min-kyu Wang, Yan Chhowalla, Manish Lee, Young Hee |
| contents | Quantum correlation and hot-carrier transport represent two fundamentally distinct regimes of electronic conduction, rarely accessible within the same device. Here, we report a state-of-the-art monolayer transition metal dichalcogenides transistor architecture on a ferroelectric substrate that enables this crossover by leveraging the strong dielectric screening and in-plane gate control. At cryogenic temperatures, the devices exhibit reproducible quasi-periodic current fluctuations, consistent with an emergent potential landscape driven by electron-electron interactions at low carrier densities. As the temperature increases, this correlated potential profile thermally dissolves and transport is dominated by the lateral gate-field that drives the carriers with high kinetic energy. These hot-carriers can efficiently surmount the scattering events, exhibiting a record-high room-temperature electron mobility of ~4,800 cm^2/Vs and a maximum on-current ~0.5 mA/μm, surpassing traditional FETs in key performance metrics. These findings establish a unified approach for probing intermediate mesoscopic orders, while advancing the transistor performance limits in scalable 2D transistors. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2511_05846 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Crossover from quantum correlation to hot-carrier transport in scattering-tolerant 2D transistors Daw, Debottam Bouzid, Houcine Lee, Sung-Gyu Cha, Wujoon Kim, Ki Kang Joo, Min-kyu Wang, Yan Chhowalla, Manish Lee, Young Hee Mesoscale and Nanoscale Physics Strongly Correlated Electrons Quantum correlation and hot-carrier transport represent two fundamentally distinct regimes of electronic conduction, rarely accessible within the same device. Here, we report a state-of-the-art monolayer transition metal dichalcogenides transistor architecture on a ferroelectric substrate that enables this crossover by leveraging the strong dielectric screening and in-plane gate control. At cryogenic temperatures, the devices exhibit reproducible quasi-periodic current fluctuations, consistent with an emergent potential landscape driven by electron-electron interactions at low carrier densities. As the temperature increases, this correlated potential profile thermally dissolves and transport is dominated by the lateral gate-field that drives the carriers with high kinetic energy. These hot-carriers can efficiently surmount the scattering events, exhibiting a record-high room-temperature electron mobility of ~4,800 cm^2/Vs and a maximum on-current ~0.5 mA/μm, surpassing traditional FETs in key performance metrics. These findings establish a unified approach for probing intermediate mesoscopic orders, while advancing the transistor performance limits in scalable 2D transistors. |
| title | Crossover from quantum correlation to hot-carrier transport in scattering-tolerant 2D transistors |
| topic | Mesoscale and Nanoscale Physics Strongly Correlated Electrons |
| url | https://arxiv.org/abs/2511.05846 |