Active Noise Reduction in Si/SiGe Gated Quantum Dots
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arXiv
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| Main Authors: | , , , , , , , |
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| Format: | Preprint |
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2025
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| _version_ | 1866915607145873408 |
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| author | Bharadwaj, Rajat Gireesan, Parvathy Sundaresan, Harikrishnan Sharma, Chithra H Kynshi, Lucky Donald L Muragesh, Prasad Bougeard, D. Thalakulam, Madhu |
| author_facet | Bharadwaj, Rajat Gireesan, Parvathy Sundaresan, Harikrishnan Sharma, Chithra H Kynshi, Lucky Donald L Muragesh, Prasad Bougeard, D. Thalakulam, Madhu |
| contents | Solid-state quantum technologies such as quantum dot qubits and quantum electrical metrology circuits rely on quantum phenomena at ultra-low energies, making them highly sensitive to various forms of environmental noise. Conventional passive filtering schemes can reduce high-frequency noise but are often ineffective against low-frequency interference, like powerline or instrument-induced. Extending such filters to lower frequencies causes practical issues such as longer stabilization times, slower system response, and increased Johnson noise, which impede low-frequency transport measurements. To address these limitations, we propose and experimentally demonstrate a generalized active noise cancellation scheme for quantum devices operating at sub-Kelvin temperatures. Our approach compensates periodic environmental interference by dynamically injecting a phase-coherent anti-noise signal directly into the device. We employ an automated feedback protocol featuring beat-frequency reduction and adaptive phase-amplitude tuning, enabling real-time compensation without any manual intervention. Unlike post-processing or passive filtering, this method suppresses noise at the device level without introducing additional time constants. We implement the scheme on a gate-defined Si/SiGe quantum dot subject to strong 50 Hz powerline interference and validate its effectiveness through acquiring Coulomb Blockade Oscillations and Coulomb diamond plots. The technique achieves substantial suppression of both the targeted interference and the overall noise floor, thereby stabilizing transport characteristics and enhancing device fidelity. While demonstrated on a quantum dot, the proposed framework is broadly applicable to a wide class of solid-state quantum devices where deterministic noise presents a critical bottleneck. |
| format | Preprint |
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arxiv_https___arxiv_org_abs_2511_06373 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Active Noise Reduction in Si/SiGe Gated Quantum Dots Bharadwaj, Rajat Gireesan, Parvathy Sundaresan, Harikrishnan Sharma, Chithra H Kynshi, Lucky Donald L Muragesh, Prasad Bougeard, D. Thalakulam, Madhu Mesoscale and Nanoscale Physics Solid-state quantum technologies such as quantum dot qubits and quantum electrical metrology circuits rely on quantum phenomena at ultra-low energies, making them highly sensitive to various forms of environmental noise. Conventional passive filtering schemes can reduce high-frequency noise but are often ineffective against low-frequency interference, like powerline or instrument-induced. Extending such filters to lower frequencies causes practical issues such as longer stabilization times, slower system response, and increased Johnson noise, which impede low-frequency transport measurements. To address these limitations, we propose and experimentally demonstrate a generalized active noise cancellation scheme for quantum devices operating at sub-Kelvin temperatures. Our approach compensates periodic environmental interference by dynamically injecting a phase-coherent anti-noise signal directly into the device. We employ an automated feedback protocol featuring beat-frequency reduction and adaptive phase-amplitude tuning, enabling real-time compensation without any manual intervention. Unlike post-processing or passive filtering, this method suppresses noise at the device level without introducing additional time constants. We implement the scheme on a gate-defined Si/SiGe quantum dot subject to strong 50 Hz powerline interference and validate its effectiveness through acquiring Coulomb Blockade Oscillations and Coulomb diamond plots. The technique achieves substantial suppression of both the targeted interference and the overall noise floor, thereby stabilizing transport characteristics and enhancing device fidelity. While demonstrated on a quantum dot, the proposed framework is broadly applicable to a wide class of solid-state quantum devices where deterministic noise presents a critical bottleneck. |
| title | Active Noise Reduction in Si/SiGe Gated Quantum Dots |
| topic | Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2511.06373 |