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| Format: | Preprint |
| Published: |
2025
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| Online Access: | https://arxiv.org/abs/2511.06783 |
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| _version_ | 1866910009415172096 |
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| author | Parafilo, A. V. |
| author_facet | Parafilo, A. V. |
| contents | We study the thermal transport properties of a mesoscopic device comprising two metallic islands embedded in a two-dimensional electron gas in the integer quantum Hall regime. It is shown that the $2M$ ballistic edge channels connecting the islands to the external reservoirs and the $N$ inter-island channels play a central role in the phenomenon of heat Coulomb blockade. Unlike the single-island case, where the heat flux is reduced by exactly one quantum of thermal conductance, we predict an additional suppression proportional to the factor $M^2/(2N+M)^2$. We further examine a configuration in which the islands are placed between electrodes at different temperatures and identify the conditions under which the Wiedemann-Franz law is violated. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2511_06783 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Heat Coulomb blockade in a double-island metal-semiconductor device Parafilo, A. V. Mesoscale and Nanoscale Physics We study the thermal transport properties of a mesoscopic device comprising two metallic islands embedded in a two-dimensional electron gas in the integer quantum Hall regime. It is shown that the $2M$ ballistic edge channels connecting the islands to the external reservoirs and the $N$ inter-island channels play a central role in the phenomenon of heat Coulomb blockade. Unlike the single-island case, where the heat flux is reduced by exactly one quantum of thermal conductance, we predict an additional suppression proportional to the factor $M^2/(2N+M)^2$. We further examine a configuration in which the islands are placed between electrodes at different temperatures and identify the conditions under which the Wiedemann-Franz law is violated. |
| title | Heat Coulomb blockade in a double-island metal-semiconductor device |
| topic | Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2511.06783 |