Plasmon resonance in a sub-THz graphene-based detector: theory and experiment
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arXiv
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| Auteurs principaux: | , , , |
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| Format: | Preprint |
| Publié: |
2025
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| _version_ | 1866913105455349760 |
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| author | Moiseenko, I. M. Titova, E. Kashchenko, M. Svintsov, D. |
| author_facet | Moiseenko, I. M. Titova, E. Kashchenko, M. Svintsov, D. |
| contents | We present a combined experimental and theoretical study of photovoltage generation in a bilayer graphene (BLG) transistor structure exposed to subterahertz radiation. The device features a global bottom and split top gate, enabling independent control of the band gap and Fermi level, thereby enabling the formation of a tunable p-n junction in graphene. Measurements show that the photovoltage arises primarily through a thermoelectric mechanism driven by heating of the p-n junction in the middle of the channel. We also provide a theoretical justification for the excitation of two-dimensional plasmons at a record-low frequency of 0.13 THz, which manifests itself as characteristic oscillations in the measured photovoltage. These plasmonic resonances, activated by a decrease in charge carrier concentration due to opening of the band gap, lead to a local enhancement of the electromagnetic field and an increase in the carrier temperature in the junction region. The record-low frequency of plasmon resonance is enabled by the low carrier density achievable in the bilayer graphene upon electrical induction of the band gap. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2511_06891 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Plasmon resonance in a sub-THz graphene-based detector: theory and experiment Moiseenko, I. M. Titova, E. Kashchenko, M. Svintsov, D. Mesoscale and Nanoscale Physics We present a combined experimental and theoretical study of photovoltage generation in a bilayer graphene (BLG) transistor structure exposed to subterahertz radiation. The device features a global bottom and split top gate, enabling independent control of the band gap and Fermi level, thereby enabling the formation of a tunable p-n junction in graphene. Measurements show that the photovoltage arises primarily through a thermoelectric mechanism driven by heating of the p-n junction in the middle of the channel. We also provide a theoretical justification for the excitation of two-dimensional plasmons at a record-low frequency of 0.13 THz, which manifests itself as characteristic oscillations in the measured photovoltage. These plasmonic resonances, activated by a decrease in charge carrier concentration due to opening of the band gap, lead to a local enhancement of the electromagnetic field and an increase in the carrier temperature in the junction region. The record-low frequency of plasmon resonance is enabled by the low carrier density achievable in the bilayer graphene upon electrical induction of the band gap. |
| title | Plasmon resonance in a sub-THz graphene-based detector: theory and experiment |
| topic | Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2511.06891 |