Defect-Mediated Phase Engineering of 2D Ag at the Graphene/SiC Interface
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| Main Authors: | , , , , , , , , , , , , , , , , , , , , , , , , , |
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| Format: | Preprint |
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2025
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| author | Jain, Arpit Zheng, Boyang Datta, Sawani Ulman, Kanchan Henz, Jakob Liu, Matthew Wei-Jun Pham, Van Dong He, Wen Dong, Chengye Lu, Li-Syuan Vera, Alexander Sawtarie, Nader Auker, Wesley Wang, Ke Hengstebeck, Bob Henshaw, Zachary W. Mathela, Shreya Wetherington, Maxwell Blades, William H. Knappenberger, Kenneth Wurstbauer, Ursula Quek, Su Ying Starke, Ulrich Huang, Shengxi Crespi, Vincent H. Robinson, Joshua A. |
| author_facet | Jain, Arpit Zheng, Boyang Datta, Sawani Ulman, Kanchan Henz, Jakob Liu, Matthew Wei-Jun Pham, Van Dong He, Wen Dong, Chengye Lu, Li-Syuan Vera, Alexander Sawtarie, Nader Auker, Wesley Wang, Ke Hengstebeck, Bob Henshaw, Zachary W. Mathela, Shreya Wetherington, Maxwell Blades, William H. Knappenberger, Kenneth Wurstbauer, Ursula Quek, Su Ying Starke, Ulrich Huang, Shengxi Crespi, Vincent H. Robinson, Joshua A. |
| contents | Atomically thin silver (Ag) films offer unique opportunities in plasmonic, quantum optics, and energy harvesting, yet conventional growth methods struggle to achieve structural control at the monolayer limit. Here, we demonstrate phase-selective synthesis of large-area, crystalline 2D Ag films via defect-engineered confinement heteroepitaxy (CHet) at the epitaxial graphene/silicon carbide (EG/SiC) interface. By tuning graphene growth and post-growth defect introduction, two distinct Ag phases are achieved with disparate properties: a nearly commensurate Ag(1) lattice stabilized by vacancy and line defects in epitaxial graphene, and a denser Ag(2) phase preferentially grown with sp3-rich zero-layer graphene. Structural and spectroscopic characterization confirm lattice registry with the SiC substrate, while theoretical calculations reveal a thermodynamic preference for Ag(2) but an easier nucleation for Ag(1). Both phases are found to be semiconducting, with the Ag(2) phase exhibiting slightly enhanced n-doping of graphene. Notably, nonlinear optical measurements reveal a three-order magnitude difference in second-order susceptibility between the two phases, demonstrating promise for phase-tunable 2D metals in reconfigurable optoelectronic and metamaterial platforms. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2511_07151 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Defect-Mediated Phase Engineering of 2D Ag at the Graphene/SiC Interface Jain, Arpit Zheng, Boyang Datta, Sawani Ulman, Kanchan Henz, Jakob Liu, Matthew Wei-Jun Pham, Van Dong He, Wen Dong, Chengye Lu, Li-Syuan Vera, Alexander Sawtarie, Nader Auker, Wesley Wang, Ke Hengstebeck, Bob Henshaw, Zachary W. Mathela, Shreya Wetherington, Maxwell Blades, William H. Knappenberger, Kenneth Wurstbauer, Ursula Quek, Su Ying Starke, Ulrich Huang, Shengxi Crespi, Vincent H. Robinson, Joshua A. Materials Science Atomically thin silver (Ag) films offer unique opportunities in plasmonic, quantum optics, and energy harvesting, yet conventional growth methods struggle to achieve structural control at the monolayer limit. Here, we demonstrate phase-selective synthesis of large-area, crystalline 2D Ag films via defect-engineered confinement heteroepitaxy (CHet) at the epitaxial graphene/silicon carbide (EG/SiC) interface. By tuning graphene growth and post-growth defect introduction, two distinct Ag phases are achieved with disparate properties: a nearly commensurate Ag(1) lattice stabilized by vacancy and line defects in epitaxial graphene, and a denser Ag(2) phase preferentially grown with sp3-rich zero-layer graphene. Structural and spectroscopic characterization confirm lattice registry with the SiC substrate, while theoretical calculations reveal a thermodynamic preference for Ag(2) but an easier nucleation for Ag(1). Both phases are found to be semiconducting, with the Ag(2) phase exhibiting slightly enhanced n-doping of graphene. Notably, nonlinear optical measurements reveal a three-order magnitude difference in second-order susceptibility between the two phases, demonstrating promise for phase-tunable 2D metals in reconfigurable optoelectronic and metamaterial platforms. |
| title | Defect-Mediated Phase Engineering of 2D Ag at the Graphene/SiC Interface |
| topic | Materials Science |
| url | https://arxiv.org/abs/2511.07151 |