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| Format: | Preprint |
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2025
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| Online-Zugang: | https://arxiv.org/abs/2511.09838 |
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| _version_ | 1866908650070605824 |
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| author | Yadav, Deepika Stathopoulos, Spyros Foster, Patrick Tsiamis, Andreas Awadein, Mohamed Levene, Hannah Prodromakis, Themis |
| author_facet | Yadav, Deepika Stathopoulos, Spyros Foster, Patrick Tsiamis, Andreas Awadein, Mohamed Levene, Hannah Prodromakis, Themis |
| contents | Tuneable capacitors are vital for adaptive and reconfigurable electronics, yet existing approaches require continuous bias or mechanical actuation. Here we demonstrate a voltage-programmable ferroelectric memcapacitor based on HfZrO that achieves more than eight stable, reprogrammable capacitance states (3-bit encoding) within a non-volatile window of 24~pF. The device switches at low voltages (3~V), with each state exhibiting long retention (10^5~s) and high endurance (10^6 cycles), ensuring reliable multi-level operation. At the nanoscale, multistate charge retention was directly visualised using atomic force microscopy, confirming the robustness of individual states beyond macroscopic measurements. As a proof of concept, the capacitor was integrated into a high-pass filter, where the programmed capacitive states shift the cutoff frequency over 5~kHz, establishing circuit-level viability. This work demonstrates the feasibility of CMOS-compatible, non-volatile, analogue memory based on ferroelectric HfZrO, paving the way for adaptive RF filters, reconfigurable analogue front-ends, and neuromorphic electronics. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2511_09838 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Multibit Ferroelectric Memcapacitor for Non-volatile Analogue Memory and Reconfigurable Filtering Yadav, Deepika Stathopoulos, Spyros Foster, Patrick Tsiamis, Andreas Awadein, Mohamed Levene, Hannah Prodromakis, Themis Materials Science Applied Physics Tuneable capacitors are vital for adaptive and reconfigurable electronics, yet existing approaches require continuous bias or mechanical actuation. Here we demonstrate a voltage-programmable ferroelectric memcapacitor based on HfZrO that achieves more than eight stable, reprogrammable capacitance states (3-bit encoding) within a non-volatile window of 24~pF. The device switches at low voltages (3~V), with each state exhibiting long retention (10^5~s) and high endurance (10^6 cycles), ensuring reliable multi-level operation. At the nanoscale, multistate charge retention was directly visualised using atomic force microscopy, confirming the robustness of individual states beyond macroscopic measurements. As a proof of concept, the capacitor was integrated into a high-pass filter, where the programmed capacitive states shift the cutoff frequency over 5~kHz, establishing circuit-level viability. This work demonstrates the feasibility of CMOS-compatible, non-volatile, analogue memory based on ferroelectric HfZrO, paving the way for adaptive RF filters, reconfigurable analogue front-ends, and neuromorphic electronics. |
| title | Multibit Ferroelectric Memcapacitor for Non-volatile Analogue Memory and Reconfigurable Filtering |
| topic | Materials Science Applied Physics |
| url | https://arxiv.org/abs/2511.09838 |