Transition from MOS to Ideal Capacitor Behavior Triggered by Tunneling in the Inversion Population Regime
Fuente:
arXiv
Guardado en:
| Autor principal: | |
|---|---|
| Formato: | Preprint |
| Publicado: |
2025
|
| Materias: | |
| Acceso en línea: | |
| Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|
| _version_ | 1866909903268872192 |
|---|---|
| author | Pereyra, Pedro |
| author_facet | Pereyra, Pedro |
| contents | An analytical solution to the nonlinear Poisson equation governing the inversion layer in metal-oxide-semiconductor (MOS) structures has recently been obtained, resolving a fundamental challenge in semiconductor theory first identified in 1955. This breakthrough enables the derivation of explicit expressions for relevant physical quantities, such as the inversion-layer width, electric potential, and charge distribution, as functions of gate voltage $V_G$, distance from oxide-semiconductor interface and impurity concentration. These quantities exhibit rapid variation during early-stage inversion but saturate once the gate voltage exceeds the threshold voltage by a few tenths of a volt signaling a transition in the MOS response to $V_G$. The onset of tunneling through the Esaki barrier leads to increased charge accumulation near the interface, reshaping the charge distribution into a two-dimensional profile and shifting the potential drop from the semiconductor to the oxide layer. This reconfiguration resembles the behavior of an ideal parallel-plate capacitor, with charge confined at the interface and the voltage drop localized across the oxide. We analyze this mechanism in detail and demonstrate, through explicit calculations, that the tunneling current through the Esaki-like barrier formed during inversion becomes dominant, effectively superseding classical inversion behavior. These results offer a new analytical foundation for quantum-aware device modeling and inform the design of next-generation MOSFET and tunneling FET architectures. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2511_11637 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Transition from MOS to Ideal Capacitor Behavior Triggered by Tunneling in the Inversion Population Regime Pereyra, Pedro Materials Science An analytical solution to the nonlinear Poisson equation governing the inversion layer in metal-oxide-semiconductor (MOS) structures has recently been obtained, resolving a fundamental challenge in semiconductor theory first identified in 1955. This breakthrough enables the derivation of explicit expressions for relevant physical quantities, such as the inversion-layer width, electric potential, and charge distribution, as functions of gate voltage $V_G$, distance from oxide-semiconductor interface and impurity concentration. These quantities exhibit rapid variation during early-stage inversion but saturate once the gate voltage exceeds the threshold voltage by a few tenths of a volt signaling a transition in the MOS response to $V_G$. The onset of tunneling through the Esaki barrier leads to increased charge accumulation near the interface, reshaping the charge distribution into a two-dimensional profile and shifting the potential drop from the semiconductor to the oxide layer. This reconfiguration resembles the behavior of an ideal parallel-plate capacitor, with charge confined at the interface and the voltage drop localized across the oxide. We analyze this mechanism in detail and demonstrate, through explicit calculations, that the tunneling current through the Esaki-like barrier formed during inversion becomes dominant, effectively superseding classical inversion behavior. These results offer a new analytical foundation for quantum-aware device modeling and inform the design of next-generation MOSFET and tunneling FET architectures. |
| title | Transition from MOS to Ideal Capacitor Behavior Triggered by Tunneling in the Inversion Population Regime |
| topic | Materials Science |
| url | https://arxiv.org/abs/2511.11637 |