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| Main Authors: | , , , |
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| Format: | Preprint |
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2025
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| Online Access: | https://arxiv.org/abs/2511.12591 |
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| _version_ | 1866909913925550080 |
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| author | Meniailava, Darya Petrov, Michael Soucek, Josef Nesladek, Milos |
| author_facet | Meniailava, Darya Petrov, Michael Soucek, Josef Nesladek, Milos |
| contents | This is a preliminary version. Improvements and additional analysis will be included in a revised manuscript. We investigate the charge-state stability of individual nitrogen-vacancy (NV) centers in weakly doped HPHT IIa diamond containing sub-ppm concentrations of boron and nitrogen. Using Ti/Al coplanar electrodes on an oxygen-terminated surface, we study how applied electric fields and optical excitation jointly govern NV charge conversion. By combining voltage-dependent photoluminescence, real-time charge-state monitoring, laser-power saturation with spectral decomposition, and time-resolved measurements, we reveal that electric fields several micrometers from the contacts significantly increase the NV- population and enhance spin readout. At low excitation powers, the NV- population evolves on minute timescales following compressed-exponential kinetics, consistent with slow space-charge rearrangement in ultra-insulating diamond. Under pulsed excitation, we observe hundreds-of-nanoseconds NV-/NV0 conversion driven by hole capture, which is strongly suppressed by applied bias. Our results demonstrate that residual boron acceptors play a key role in determining charge-state stability and show how electrical bias can reliably stabilize NV- in weakly doped bulk diamond. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2511_12591 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Charge-state stability of single NV centers in HPHT-type IIa diamond Meniailava, Darya Petrov, Michael Soucek, Josef Nesladek, Milos Quantum Physics This is a preliminary version. Improvements and additional analysis will be included in a revised manuscript. We investigate the charge-state stability of individual nitrogen-vacancy (NV) centers in weakly doped HPHT IIa diamond containing sub-ppm concentrations of boron and nitrogen. Using Ti/Al coplanar electrodes on an oxygen-terminated surface, we study how applied electric fields and optical excitation jointly govern NV charge conversion. By combining voltage-dependent photoluminescence, real-time charge-state monitoring, laser-power saturation with spectral decomposition, and time-resolved measurements, we reveal that electric fields several micrometers from the contacts significantly increase the NV- population and enhance spin readout. At low excitation powers, the NV- population evolves on minute timescales following compressed-exponential kinetics, consistent with slow space-charge rearrangement in ultra-insulating diamond. Under pulsed excitation, we observe hundreds-of-nanoseconds NV-/NV0 conversion driven by hole capture, which is strongly suppressed by applied bias. Our results demonstrate that residual boron acceptors play a key role in determining charge-state stability and show how electrical bias can reliably stabilize NV- in weakly doped bulk diamond. |
| title | Charge-state stability of single NV centers in HPHT-type IIa diamond |
| topic | Quantum Physics |
| url | https://arxiv.org/abs/2511.12591 |