Microwave-acoustic-based isolated gate driver for power electronics
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arXiv
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| Autori principali: | , , , , , , , , |
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| Natura: | Preprint |
| Pubblicazione: |
2025
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| _version_ | 1866914470381486080 |
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| author | Jin, Liyang Xi, Zichen Thomas, Joseph G. Ji, Jun Zhang, Yuanzhi Chen, Nuo Zhu, Yizheng Shao, Linbo Zhu, Liyan |
| author_facet | Jin, Liyang Xi, Zichen Thomas, Joseph G. Ji, Jun Zhang, Yuanzhi Chen, Nuo Zhu, Yizheng Shao, Linbo Zhu, Liyan |
| contents | Electrical isolation is critical to ensure safety and minimize electromagnetic interference (EMI), yet existing methods struggle to simultaneously transmit power and signals through a unified channel. Here we demonstrate a mechanically-isolated gate driver based on microwave-frequency surface acoustic wave (SAW) device on lithium niobate that achieves galvanic isolation of 2.75 kV with ultralow isolation capacitance (0.032 pF) over 1.25 mm mechanical propagation length, delivering 13.4 V open-circuit voltage and 44.4 mA short-circuit current. We demonstrate isolated gate driving for a gallium nitride (GaN) high-electron-mobility transistor, achieving a turn-on time of 108.8 ns comparable to commercial drivers and validate its operation in a buck converter. In addition, our SAW device operates over an ultrawide temperature range from 0.5 K (-272.6 °C) to 544 K (271 °C). The microwave-frequency SAW devices offer inherent EMI immunity and potential for heterogeneous integration on multiple semiconductor platforms, enabling compact, high-performance isolated power and signal transmission in advanced power electronics. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2511_13412 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Microwave-acoustic-based isolated gate driver for power electronics Jin, Liyang Xi, Zichen Thomas, Joseph G. Ji, Jun Zhang, Yuanzhi Chen, Nuo Zhu, Yizheng Shao, Linbo Zhu, Liyan Systems and Control Applied Physics Electrical isolation is critical to ensure safety and minimize electromagnetic interference (EMI), yet existing methods struggle to simultaneously transmit power and signals through a unified channel. Here we demonstrate a mechanically-isolated gate driver based on microwave-frequency surface acoustic wave (SAW) device on lithium niobate that achieves galvanic isolation of 2.75 kV with ultralow isolation capacitance (0.032 pF) over 1.25 mm mechanical propagation length, delivering 13.4 V open-circuit voltage and 44.4 mA short-circuit current. We demonstrate isolated gate driving for a gallium nitride (GaN) high-electron-mobility transistor, achieving a turn-on time of 108.8 ns comparable to commercial drivers and validate its operation in a buck converter. In addition, our SAW device operates over an ultrawide temperature range from 0.5 K (-272.6 °C) to 544 K (271 °C). The microwave-frequency SAW devices offer inherent EMI immunity and potential for heterogeneous integration on multiple semiconductor platforms, enabling compact, high-performance isolated power and signal transmission in advanced power electronics. |
| title | Microwave-acoustic-based isolated gate driver for power electronics |
| topic | Systems and Control Applied Physics |
| url | https://arxiv.org/abs/2511.13412 |