Tuning of exciton type by environmental screening
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arXiv
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| Main Authors: | , , , |
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| Format: | Preprint |
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2025
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| _version_ | 1866908663286857728 |
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| author | Lima, Igor L. C. Milošević, M. V. Peeters, F. M. Chaves, Andrey |
| author_facet | Lima, Igor L. C. Milošević, M. V. Peeters, F. M. Chaves, Andrey |
| contents | We theoretically investigate the binding energy and electron-hole (e-h) overlap of excitonic states confined at the interface between two-dimensional materials with type-II band alignment, i.e., with lowest conduction and highest valence band edges placed in different materials, arranged in a side-by-side planar heterostructure. We propose a variational procedure within the effective mass approximation to calculate the exciton ground state and apply our model to a monolayer MoS$_2$/WS$_2$ heterostructure. The role of nonabrupt interfaces between the materials is accounted for in our model by assuming a W$_x$Mo$_{1-x}$S$_2$ alloy around the interfacial region. Our results demonstrate that (i) interface-bound excitons are energetically favorable only for small interface thickness and/or for systems under high dielectric screening by the materials surrounding the monolayer, and that (ii) the interface exciton binding energy and its e-h overlap are controllable by the interface width and dielectric environment. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2511_14866 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Tuning of exciton type by environmental screening Lima, Igor L. C. Milošević, M. V. Peeters, F. M. Chaves, Andrey Mesoscale and Nanoscale Physics We theoretically investigate the binding energy and electron-hole (e-h) overlap of excitonic states confined at the interface between two-dimensional materials with type-II band alignment, i.e., with lowest conduction and highest valence band edges placed in different materials, arranged in a side-by-side planar heterostructure. We propose a variational procedure within the effective mass approximation to calculate the exciton ground state and apply our model to a monolayer MoS$_2$/WS$_2$ heterostructure. The role of nonabrupt interfaces between the materials is accounted for in our model by assuming a W$_x$Mo$_{1-x}$S$_2$ alloy around the interfacial region. Our results demonstrate that (i) interface-bound excitons are energetically favorable only for small interface thickness and/or for systems under high dielectric screening by the materials surrounding the monolayer, and that (ii) the interface exciton binding energy and its e-h overlap are controllable by the interface width and dielectric environment. |
| title | Tuning of exciton type by environmental screening |
| topic | Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2511.14866 |