Exciton and trion formation in systems with van Hove singularities

Fuente: arXiv
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Autori principali: Burke, Lewis J., Greenaway, Mark T., Betouras, Joseph J.
Natura: Preprint
Pubblicazione: 2025
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author Burke, Lewis J.
Greenaway, Mark T.
Betouras, Joseph J.
author_facet Burke, Lewis J.
Greenaway, Mark T.
Betouras, Joseph J.
contents We investigate the role of van-Hove singularities (VHS) in a system's electronic band structure on the formation and properties of excitons and trions. We consider (i) the different parameters of a Mexican-hat-type dispersion of the valence band, which hosts a VHS at the band edge, and (ii) the presence of regular VHS or higher-order VHS (HOVHS). We find that for a given spin-degenerate Mexican-hat-shaped valence band, where a trion and exciton can form, trion formation becomes more favourable as the Mexican-hat dispersion becomes narrower. Also, we show that if the electronic band structure contains an HOVHS, then both the exciton and trion dispersion will also contain such a singularity. Therefore, a HOVHS in the valence band can suitably change the density of states (DOS) of the bound-state particle and lead to the generation of new states, which could impact the optical properties of the system. Our work provides a pathway to how 2D quantum materials, which host such singularities, can be engineered to favour a particular bound-state thus opening new avenues for these materials into potential applications.
format Preprint
id arxiv_https___arxiv_org_abs_2511_15824
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Exciton and trion formation in systems with van Hove singularities
Burke, Lewis J.
Greenaway, Mark T.
Betouras, Joseph J.
Mesoscale and Nanoscale Physics
Materials Science
We investigate the role of van-Hove singularities (VHS) in a system's electronic band structure on the formation and properties of excitons and trions. We consider (i) the different parameters of a Mexican-hat-type dispersion of the valence band, which hosts a VHS at the band edge, and (ii) the presence of regular VHS or higher-order VHS (HOVHS). We find that for a given spin-degenerate Mexican-hat-shaped valence band, where a trion and exciton can form, trion formation becomes more favourable as the Mexican-hat dispersion becomes narrower. Also, we show that if the electronic band structure contains an HOVHS, then both the exciton and trion dispersion will also contain such a singularity. Therefore, a HOVHS in the valence band can suitably change the density of states (DOS) of the bound-state particle and lead to the generation of new states, which could impact the optical properties of the system. Our work provides a pathway to how 2D quantum materials, which host such singularities, can be engineered to favour a particular bound-state thus opening new avenues for these materials into potential applications.
title Exciton and trion formation in systems with van Hove singularities
topic Mesoscale and Nanoscale Physics
Materials Science
url https://arxiv.org/abs/2511.15824