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Main Authors: Jimenez, Valery Ortiz, Haney, Paul M., Mahfouzi, Farzad, Tran, Ngoch Thanh Mai, Rigosi, Albert F., Richter, Curt A.
Format: Preprint
Published: 2025
Subjects:
Online Access:https://arxiv.org/abs/2511.15930
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author Jimenez, Valery Ortiz
Haney, Paul M.
Mahfouzi, Farzad
Tran, Ngoch Thanh Mai
Rigosi, Albert F.
Richter, Curt A.
author_facet Jimenez, Valery Ortiz
Haney, Paul M.
Mahfouzi, Farzad
Tran, Ngoch Thanh Mai
Rigosi, Albert F.
Richter, Curt A.
contents The quantum anomalous Hall effect shows great promise for realization of the ohm without the need for an external magnetic field. The most mature material platform is magnetically doped topological insulators. In these materials, precise quantization is limited to low temperatures, with the activation energy for dissipative transport typically in the range of 1 K. One potential source of dissipative transport is non-chiral edge states. These states are expected to be present in sufficiently thick samples. In this work, we perform extensive Hall and non-local resistance measurements in a Hall bar geometry at 2 K. By comparing 15 independent transport measurements to different transport models, we find that the system behavior is well-described by a simple continuum Ohm's law model. The addition of non-chiral edge states into the model does not significantly improve the fitting, and we conclude that there is not strong evidence for these states. We discuss the implications of our results for the prospect of high temperature quantized anomalous Hall effect in these materials.
format Preprint
id arxiv_https___arxiv_org_abs_2511_15930
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Nonlocal Transport in Cr-doped (Bi,Sb)2Te3: Absence of Nonchiral Edge States
Jimenez, Valery Ortiz
Haney, Paul M.
Mahfouzi, Farzad
Tran, Ngoch Thanh Mai
Rigosi, Albert F.
Richter, Curt A.
Mesoscale and Nanoscale Physics
The quantum anomalous Hall effect shows great promise for realization of the ohm without the need for an external magnetic field. The most mature material platform is magnetically doped topological insulators. In these materials, precise quantization is limited to low temperatures, with the activation energy for dissipative transport typically in the range of 1 K. One potential source of dissipative transport is non-chiral edge states. These states are expected to be present in sufficiently thick samples. In this work, we perform extensive Hall and non-local resistance measurements in a Hall bar geometry at 2 K. By comparing 15 independent transport measurements to different transport models, we find that the system behavior is well-described by a simple continuum Ohm's law model. The addition of non-chiral edge states into the model does not significantly improve the fitting, and we conclude that there is not strong evidence for these states. We discuss the implications of our results for the prospect of high temperature quantized anomalous Hall effect in these materials.
title Nonlocal Transport in Cr-doped (Bi,Sb)2Te3: Absence of Nonchiral Edge States
topic Mesoscale and Nanoscale Physics
url https://arxiv.org/abs/2511.15930