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Main Authors: Tan, Peng, Chen, Yuantao, Zhang, Yuqi, Cheng, Hanyan, Xian, Guoyu, Cheng, Ming, Sun, Minghong, Yin, Jiaxin, Wang, Feifan, Wang, Yaxian, Liu, Yanjun, Huang, Mingyuan, Wang, Zhiwei, Yao, Yugui, Meng, Sheng, Huang, Li, Dai, Yanan
Format: Preprint
Published: 2025
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Online Access:https://arxiv.org/abs/2511.16165
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author Tan, Peng
Chen, Yuantao
Zhang, Yuqi
Cheng, Hanyan
Xian, Guoyu
Cheng, Ming
Sun, Minghong
Yin, Jiaxin
Wang, Feifan
Wang, Yaxian
Liu, Yanjun
Huang, Mingyuan
Wang, Zhiwei
Yao, Yugui
Meng, Sheng
Huang, Li
Dai, Yanan
author_facet Tan, Peng
Chen, Yuantao
Zhang, Yuqi
Cheng, Hanyan
Xian, Guoyu
Cheng, Ming
Sun, Minghong
Yin, Jiaxin
Wang, Feifan
Wang, Yaxian
Liu, Yanjun
Huang, Mingyuan
Wang, Zhiwei
Yao, Yugui
Meng, Sheng
Huang, Li
Dai, Yanan
contents Precise and ultrafast control of electronic band structures is a central challenge for advancing quantum functional materials and devices. Conventional approaches--such as chemical doping, lattice strain, or external gating--offer robust stability but remain confined to the quasi-static regime, far from the intrinsic femto- to picosecond dynamics that govern many-body interactions. Here, using cryogenic transient reflectance spectroscopy, we realize dynamic bandgap engineering in the anisotropic topological insulator $α$-Bi$_4$Br$_4$ with unprecedented micro-electron-volt ($μ$eV) precision. The exceptional sensitivity arises from the cooperative action of long-lived topological carriers, stabilized by restricted bulk-to-edge scattering phase space, together with symmetry-resolved coherent phonons that modulate inter-chain hopping. These channels jointly modify Coulomb screening and interband transitions, enabling both gradual and oscillatory control of the electronic structure. Supported by first-principles and tight-binding theory, we further demonstrate a dual-pump coherent control strategy for continuous, mode-selective tuning of electronic energies with $μ$eV accuracy. This framework paves the way for ultrafast on-demand band-structure engineering, pointing toward new frontiers in quantum optoelectronics, precision measurement in molecular and biological systems, and attosecond control of matter.
format Preprint
id arxiv_https___arxiv_org_abs_2511_16165
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Ultrafast μeV-Precision Bandgap Engineering in Low-Dimensional Topological Insulators
Tan, Peng
Chen, Yuantao
Zhang, Yuqi
Cheng, Hanyan
Xian, Guoyu
Cheng, Ming
Sun, Minghong
Yin, Jiaxin
Wang, Feifan
Wang, Yaxian
Liu, Yanjun
Huang, Mingyuan
Wang, Zhiwei
Yao, Yugui
Meng, Sheng
Huang, Li
Dai, Yanan
Mesoscale and Nanoscale Physics
Precise and ultrafast control of electronic band structures is a central challenge for advancing quantum functional materials and devices. Conventional approaches--such as chemical doping, lattice strain, or external gating--offer robust stability but remain confined to the quasi-static regime, far from the intrinsic femto- to picosecond dynamics that govern many-body interactions. Here, using cryogenic transient reflectance spectroscopy, we realize dynamic bandgap engineering in the anisotropic topological insulator $α$-Bi$_4$Br$_4$ with unprecedented micro-electron-volt ($μ$eV) precision. The exceptional sensitivity arises from the cooperative action of long-lived topological carriers, stabilized by restricted bulk-to-edge scattering phase space, together with symmetry-resolved coherent phonons that modulate inter-chain hopping. These channels jointly modify Coulomb screening and interband transitions, enabling both gradual and oscillatory control of the electronic structure. Supported by first-principles and tight-binding theory, we further demonstrate a dual-pump coherent control strategy for continuous, mode-selective tuning of electronic energies with $μ$eV accuracy. This framework paves the way for ultrafast on-demand band-structure engineering, pointing toward new frontiers in quantum optoelectronics, precision measurement in molecular and biological systems, and attosecond control of matter.
title Ultrafast μeV-Precision Bandgap Engineering in Low-Dimensional Topological Insulators
topic Mesoscale and Nanoscale Physics
url https://arxiv.org/abs/2511.16165