Following the Long-Term Evolution of sp$^3$-type Defects in Tritiated Graphene using Raman Spectroscopy

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Main Authors: Zeller, Genrich, Schlösser, Magnus, Telle, Helmut H.
Format: Preprint
Published: 2025
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author Zeller, Genrich
Schlösser, Magnus
Telle, Helmut H.
author_facet Zeller, Genrich
Schlösser, Magnus
Telle, Helmut H.
contents We report on the evolution of tritium-induced sp$^3$-defects in monolayer graphene on a Si/SiO$_2$ substrate, by comparing large-area Raman maps of the same two samples, acquired just after fabrication and twice thereafter, about 9-12 months apart. Inbetween measurements the samples were kept under standard laboratory conditions. Using a conservative classification of sp$^3$-type spectra, based on the D/D' peak intensity ratio, we observed almost complete depletion of sp$^3$-type defects over the investigation period of about two years. This by far exceeds the ~5.5% annual reduction expected from tritium decay alone (~3x larger). This change in the defect composition is accompanied by a recovery of the 2D-band of graphene and an overall decrease in defect-density, as determined via the D/G intensity ratio. Hydogenated graphene is reported to be reasonably stable over several months, when kept under vacuum, but suffers substantial hydrogen loss under laboratory air conditions. While the results shown here for tritiated graphene exhibit similarities with hydrogenated graphene, however, some distinct differences are observed.
format Preprint
id arxiv_https___arxiv_org_abs_2511_16168
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Following the Long-Term Evolution of sp$^3$-type Defects in Tritiated Graphene using Raman Spectroscopy
Zeller, Genrich
Schlösser, Magnus
Telle, Helmut H.
Materials Science
We report on the evolution of tritium-induced sp$^3$-defects in monolayer graphene on a Si/SiO$_2$ substrate, by comparing large-area Raman maps of the same two samples, acquired just after fabrication and twice thereafter, about 9-12 months apart. Inbetween measurements the samples were kept under standard laboratory conditions. Using a conservative classification of sp$^3$-type spectra, based on the D/D' peak intensity ratio, we observed almost complete depletion of sp$^3$-type defects over the investigation period of about two years. This by far exceeds the ~5.5% annual reduction expected from tritium decay alone (~3x larger). This change in the defect composition is accompanied by a recovery of the 2D-band of graphene and an overall decrease in defect-density, as determined via the D/G intensity ratio. Hydogenated graphene is reported to be reasonably stable over several months, when kept under vacuum, but suffers substantial hydrogen loss under laboratory air conditions. While the results shown here for tritiated graphene exhibit similarities with hydrogenated graphene, however, some distinct differences are observed.
title Following the Long-Term Evolution of sp$^3$-type Defects in Tritiated Graphene using Raman Spectroscopy
topic Materials Science
url https://arxiv.org/abs/2511.16168