Optical Waveguide-Pair Design for CMOS-Compatible Hybrid III-V-on-Silicon Quantum Dot Lasers
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arXiv
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| Autores principales: | , , |
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| Formato: | Preprint |
| Publicado: |
2025
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| _version_ | 1866914165475508224 |
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| author | Smith, Peter Raymond Papatryfonos, Konstantinos Selviah, David R. |
| author_facet | Smith, Peter Raymond Papatryfonos, Konstantinos Selviah, David R. |
| contents | The development of compact, energy-efficient integrated lasers operating at 1.3 um remains a critical focus in silicon photonics, essential for advancing data communications and optical interconnect technologies. This paper presents a numerical study of distributed Bragg reflector (DBR) hybrid III-V-on-silicon lasers, analyzing design trade-offs and optimization strategies based on supermode theory. The III-V section of the design incorporates InAs/(Al)GaAs quantum dots (QDs), which offer improved temperature insensitivity at the cost of more complex III-V/Si optical coupling, due to the high refractive index of (Al)GaAs. Consequently, many current laser designs rely on silicon waveguides with a thickness exceeding 220 nm, which helps coupling but limits their compatibility with standard CMOS technologies. To address this challenge, we perform detailed simulations focusing on 220-nm-thick silicon waveguides. We first examine how the mode profiles jointly depend on the silicon waveguide dimensions and the geometry and composition of the III-V stack. Based on this analysis, we propose a novel epitaxial design that enables effective III-V/Si coupling, with the optical mode strongly confined within the III-V waveguide in the gain section and efficiently transferred to the silicon waveguide in the passive sections. Moreover, the final design is shown to be robust to fabrication-induced deviations from nominal parameters. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2511_16222 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Optical Waveguide-Pair Design for CMOS-Compatible Hybrid III-V-on-Silicon Quantum Dot Lasers Smith, Peter Raymond Papatryfonos, Konstantinos Selviah, David R. Optics Other Condensed Matter The development of compact, energy-efficient integrated lasers operating at 1.3 um remains a critical focus in silicon photonics, essential for advancing data communications and optical interconnect technologies. This paper presents a numerical study of distributed Bragg reflector (DBR) hybrid III-V-on-silicon lasers, analyzing design trade-offs and optimization strategies based on supermode theory. The III-V section of the design incorporates InAs/(Al)GaAs quantum dots (QDs), which offer improved temperature insensitivity at the cost of more complex III-V/Si optical coupling, due to the high refractive index of (Al)GaAs. Consequently, many current laser designs rely on silicon waveguides with a thickness exceeding 220 nm, which helps coupling but limits their compatibility with standard CMOS technologies. To address this challenge, we perform detailed simulations focusing on 220-nm-thick silicon waveguides. We first examine how the mode profiles jointly depend on the silicon waveguide dimensions and the geometry and composition of the III-V stack. Based on this analysis, we propose a novel epitaxial design that enables effective III-V/Si coupling, with the optical mode strongly confined within the III-V waveguide in the gain section and efficiently transferred to the silicon waveguide in the passive sections. Moreover, the final design is shown to be robust to fabrication-induced deviations from nominal parameters. |
| title | Optical Waveguide-Pair Design for CMOS-Compatible Hybrid III-V-on-Silicon Quantum Dot Lasers |
| topic | Optics Other Condensed Matter |
| url | https://arxiv.org/abs/2511.16222 |