Broadband telecom single-photon emissions from InAs/InP quantum dots grown by MOVPE droplet epitaxy
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arXiv
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| Format: | Preprint |
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2025
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| _version_ | 1866912721983766528 |
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| author | Zhang, Shichen Liu, Li Guo, Kai Mu, Xingli Gao, Yuanfei Liu, Junqi Liu, Fengqi Lu, Quanyong Yuan, Zhiliang |
| author_facet | Zhang, Shichen Liu, Li Guo, Kai Mu, Xingli Gao, Yuanfei Liu, Junqi Liu, Fengqi Lu, Quanyong Yuan, Zhiliang |
| contents | The development of quantum materials for single-photon emission is crucial for the advancement of quantum information technology. Although significant advancement has been witnessed in recent years for single photon sources in near infrared band (λ~700-1000 nm), several challenges have yet to be addressed for ideal single photon emission at the telecommunication band. In this study, we present a droplet-epitaxy strategy for O-band to C-band single-photon source based semiconductor quantum dots (QDs) using metal-organic vapor-phase epitaxy (MOVPE). Via investigating the growth conditions of the epitaxial process, we have successfully synthesized InAs/InP QDs with narrow emission lines spanning a broad spectral range of λ~1200-1600 nm. The morphological and optical properties of the samples were characterized using atomic force microscopy and micro photoluminescence spectroscopy. The recorded single-photon purity of a plain QD structure reaches (g(2)(0) = 0.16), with a radiative recombination lifetime as short as 1.5 ns. This work provides a crucial platform for future research on integrated microcavity enhancement techniques and coupled QDs with other quantum photonics in the telecom bands, offering significant prospects for quantum network applications. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2511_16894 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Broadband telecom single-photon emissions from InAs/InP quantum dots grown by MOVPE droplet epitaxy Zhang, Shichen Liu, Li Guo, Kai Mu, Xingli Gao, Yuanfei Liu, Junqi Liu, Fengqi Lu, Quanyong Yuan, Zhiliang Optics Materials Science Quantum Physics The development of quantum materials for single-photon emission is crucial for the advancement of quantum information technology. Although significant advancement has been witnessed in recent years for single photon sources in near infrared band (λ~700-1000 nm), several challenges have yet to be addressed for ideal single photon emission at the telecommunication band. In this study, we present a droplet-epitaxy strategy for O-band to C-band single-photon source based semiconductor quantum dots (QDs) using metal-organic vapor-phase epitaxy (MOVPE). Via investigating the growth conditions of the epitaxial process, we have successfully synthesized InAs/InP QDs with narrow emission lines spanning a broad spectral range of λ~1200-1600 nm. The morphological and optical properties of the samples were characterized using atomic force microscopy and micro photoluminescence spectroscopy. The recorded single-photon purity of a plain QD structure reaches (g(2)(0) = 0.16), with a radiative recombination lifetime as short as 1.5 ns. This work provides a crucial platform for future research on integrated microcavity enhancement techniques and coupled QDs with other quantum photonics in the telecom bands, offering significant prospects for quantum network applications. |
| title | Broadband telecom single-photon emissions from InAs/InP quantum dots grown by MOVPE droplet epitaxy |
| topic | Optics Materials Science Quantum Physics |
| url | https://arxiv.org/abs/2511.16894 |