Single-Defect Spectroscopy via Random Telegraph Noise in Graphene-Contacted ReS$_2$-hBN Heterostructures
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arXiv
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| Auteurs principaux: | , , , , , , , |
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| Format: | Preprint |
| Publié: |
2025
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| _version_ | 1866915630754562048 |
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| author | Mukherjee, Shubhrasish Samanta, Gaurab Moulick, Shubhadip Kulkarni, Ruta Watanabe, Kenji Taniguchi, Takashi Thamizhavel, Arumugum Pal, Atindra Nath |
| author_facet | Mukherjee, Shubhrasish Samanta, Gaurab Moulick, Shubhadip Kulkarni, Ruta Watanabe, Kenji Taniguchi, Takashi Thamizhavel, Arumugum Pal, Atindra Nath |
| contents | Defect spectroscopy in two-dimensional (2D) field-effect transistors (FETs) requires device architectures that suppress contact and disorder artifacts while preserving intrinsic carrier dynamics. Here, we demonstrate ReS$_2$-hBN FETs with few-layer graphene (FLG) van der Waals contacts that form nearly barrier-free interfaces, enabling intrinsic transport in ReS$_2$, an anisotropic, low-symmetry TMDC rarely exhibiting disorder-free behavior. The clean ReS$_2$-FLG platform allows direct observation of random telegraph noise (RTN) even in micron-scale channels, manifested as discrete two-level current fluctuations between 90-150 K arising from stochastic trapping at localized hBN defect sites. With increasing temperature, the RTN evolves into a 1/f spectrum as multiple traps activate. Statistical analysis of RTN amplitudes and capture-emission kinetics identifies substitutional carbon-related centers in hBN as dominant defects. These findings establish a generalizable approach for probing dielectric-origin defect dynamics in intrinsically conducting, low-symmetry 2D semiconductors. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2511_17125 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Single-Defect Spectroscopy via Random Telegraph Noise in Graphene-Contacted ReS$_2$-hBN Heterostructures Mukherjee, Shubhrasish Samanta, Gaurab Moulick, Shubhadip Kulkarni, Ruta Watanabe, Kenji Taniguchi, Takashi Thamizhavel, Arumugum Pal, Atindra Nath Mesoscale and Nanoscale Physics Materials Science Defect spectroscopy in two-dimensional (2D) field-effect transistors (FETs) requires device architectures that suppress contact and disorder artifacts while preserving intrinsic carrier dynamics. Here, we demonstrate ReS$_2$-hBN FETs with few-layer graphene (FLG) van der Waals contacts that form nearly barrier-free interfaces, enabling intrinsic transport in ReS$_2$, an anisotropic, low-symmetry TMDC rarely exhibiting disorder-free behavior. The clean ReS$_2$-FLG platform allows direct observation of random telegraph noise (RTN) even in micron-scale channels, manifested as discrete two-level current fluctuations between 90-150 K arising from stochastic trapping at localized hBN defect sites. With increasing temperature, the RTN evolves into a 1/f spectrum as multiple traps activate. Statistical analysis of RTN amplitudes and capture-emission kinetics identifies substitutional carbon-related centers in hBN as dominant defects. These findings establish a generalizable approach for probing dielectric-origin defect dynamics in intrinsically conducting, low-symmetry 2D semiconductors. |
| title | Single-Defect Spectroscopy via Random Telegraph Noise in Graphene-Contacted ReS$_2$-hBN Heterostructures |
| topic | Mesoscale and Nanoscale Physics Materials Science |
| url | https://arxiv.org/abs/2511.17125 |