Coexistence of unconventional spin-orbit torque and in-plane Hall effect in a single ferromagnetic layer
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| Main Authors: | , , , , , , , , , , , , , , , , , , , , |
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| Format: | Preprint |
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2025
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| _version_ | 1866909916330983424 |
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| author | Chen, Jiaxin Zheng, Hongsheng Chen, Hongliang Shen, Qia Pan, Chang Zheng, Zhenyi Yi, Hemian Guan, Dandan Liu, Xiaoxue Li, Yaoyi Wang, Shiyong Zheng, Hao Liu, Canhua Jia, Jinfeng Chen, Jingsheng Zhong, Ruidan Wang, Lei Qiu, Xuepeng Yang, Yumeng Manchon, Aurélien Liu, Liang |
| author_facet | Chen, Jiaxin Zheng, Hongsheng Chen, Hongliang Shen, Qia Pan, Chang Zheng, Zhenyi Yi, Hemian Guan, Dandan Liu, Xiaoxue Li, Yaoyi Wang, Shiyong Zheng, Hao Liu, Canhua Jia, Jinfeng Chen, Jingsheng Zhong, Ruidan Wang, Lei Qiu, Xuepeng Yang, Yumeng Manchon, Aurélien Liu, Liang |
| contents | The symmetry of a material fundamentally governs its spin transport properties. While unconventional spin transport phenomena have been predominantly explored in low-symmetry systems (e.g., $C_{1v}$ symmetry), high-symmetry crystals--which constitute the majority of industry-compatible materials--are generally expected to exhibit only conventional spin-transport behavior. Here, we report the coexistence of two unconventional spin transport effects, the crystal spin-orbit torque (CSOT) and the crystal in-plane Hall effect (CIHE), in a CoPt single ferromagnetic layer with $C_{3v}$ symmetry. Leveraging the CSOT, we achieve nearly 100% field-free perpendicular magnetization switching in a 6 nm CoPt layer at room temperature. Simultaneously, the CIHE observed in this material exhibits nearly identical dependencies on both current angle and growth temperature as the CSOT. Symmetry analysis confirms that both effects share a common physical origin. Our work not only establishes CoPt as a high-performance spin-orbit material, but also demonstrates that unconventional spin transport can be realized in high-symmetry systems, thereby opening a broad pathway for their application in practical spintronics. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2511_17231 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Coexistence of unconventional spin-orbit torque and in-plane Hall effect in a single ferromagnetic layer Chen, Jiaxin Zheng, Hongsheng Chen, Hongliang Shen, Qia Pan, Chang Zheng, Zhenyi Yi, Hemian Guan, Dandan Liu, Xiaoxue Li, Yaoyi Wang, Shiyong Zheng, Hao Liu, Canhua Jia, Jinfeng Chen, Jingsheng Zhong, Ruidan Wang, Lei Qiu, Xuepeng Yang, Yumeng Manchon, Aurélien Liu, Liang Mesoscale and Nanoscale Physics Materials Science The symmetry of a material fundamentally governs its spin transport properties. While unconventional spin transport phenomena have been predominantly explored in low-symmetry systems (e.g., $C_{1v}$ symmetry), high-symmetry crystals--which constitute the majority of industry-compatible materials--are generally expected to exhibit only conventional spin-transport behavior. Here, we report the coexistence of two unconventional spin transport effects, the crystal spin-orbit torque (CSOT) and the crystal in-plane Hall effect (CIHE), in a CoPt single ferromagnetic layer with $C_{3v}$ symmetry. Leveraging the CSOT, we achieve nearly 100% field-free perpendicular magnetization switching in a 6 nm CoPt layer at room temperature. Simultaneously, the CIHE observed in this material exhibits nearly identical dependencies on both current angle and growth temperature as the CSOT. Symmetry analysis confirms that both effects share a common physical origin. Our work not only establishes CoPt as a high-performance spin-orbit material, but also demonstrates that unconventional spin transport can be realized in high-symmetry systems, thereby opening a broad pathway for their application in practical spintronics. |
| title | Coexistence of unconventional spin-orbit torque and in-plane Hall effect in a single ferromagnetic layer |
| topic | Mesoscale and Nanoscale Physics Materials Science |
| url | https://arxiv.org/abs/2511.17231 |