Residual Stress Anisotropy In Thin-Film Lithium Niobate For Stress-Managed MEMS
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arXiv
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| Autori principali: | , , , , , , |
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| Natura: | Preprint |
| Pubblicazione: |
2025
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| _version_ | 1866908981541208064 |
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| author | Kim, Byeongjin Anderson, Ian Hsu, Tzu-Hsuan Yao, Ziqian Chaudhari, Mihir Cho, Sinwoo Lu, Ruochen |
| author_facet | Kim, Byeongjin Anderson, Ian Hsu, Tzu-Hsuan Yao, Ziqian Chaudhari, Mihir Cho, Sinwoo Lu, Ruochen |
| contents | In this work, we present the first experimental study of residual stress and post-release beam deflection in 128-degree Y-cut thin-film lithium niobate (TFLN) on Si, revealing pronounced stress anisotropy with in-plane orientation. Using optical profilometry with curvature fitting, we extract the stress gradient (sigma1) and generate orientation-resolved stress maps across multiple film thicknesses (100 nm, 220 nm, and 460 nm). For films in the 220 to 460 nm range, we identify stress-free in-plane orientations near approximately 55 degrees and 125 degrees, enabling extremely flat suspended beams. In contrast, ultra-thin 100 nm films exhibit shifted stress-free orientations near approximately 20 degrees and 160 degrees. Leveraging these orientations, we demonstrate very long suspended beams up to 2 cm in length, 10 micrometers in width, and 460 nm in thickness without collapse. These results establish in-plane stress anisotropy and thickness selection in TFLN as practical design levers for mechanically stable, scalable, and stress-managed microelectromechanical systems (MEMS). |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2511_17474 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Residual Stress Anisotropy In Thin-Film Lithium Niobate For Stress-Managed MEMS Kim, Byeongjin Anderson, Ian Hsu, Tzu-Hsuan Yao, Ziqian Chaudhari, Mihir Cho, Sinwoo Lu, Ruochen Applied Physics In this work, we present the first experimental study of residual stress and post-release beam deflection in 128-degree Y-cut thin-film lithium niobate (TFLN) on Si, revealing pronounced stress anisotropy with in-plane orientation. Using optical profilometry with curvature fitting, we extract the stress gradient (sigma1) and generate orientation-resolved stress maps across multiple film thicknesses (100 nm, 220 nm, and 460 nm). For films in the 220 to 460 nm range, we identify stress-free in-plane orientations near approximately 55 degrees and 125 degrees, enabling extremely flat suspended beams. In contrast, ultra-thin 100 nm films exhibit shifted stress-free orientations near approximately 20 degrees and 160 degrees. Leveraging these orientations, we demonstrate very long suspended beams up to 2 cm in length, 10 micrometers in width, and 460 nm in thickness without collapse. These results establish in-plane stress anisotropy and thickness selection in TFLN as practical design levers for mechanically stable, scalable, and stress-managed microelectromechanical systems (MEMS). |
| title | Residual Stress Anisotropy In Thin-Film Lithium Niobate For Stress-Managed MEMS |
| topic | Applied Physics |
| url | https://arxiv.org/abs/2511.17474 |