Floquet-engineered Valley Topology with Anisotropic Response in 1T'-WSe$_2$ and Janus WSeTe monolayers

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Hauptverfasser: Li, Zhe, Cao, Haijun, Li, Lijuan, Fu, Huixia, Guan, Mengxue, Meng, Sheng
Format: Preprint
Veröffentlicht: 2025
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author Li, Zhe
Cao, Haijun
Li, Lijuan
Fu, Huixia
Guan, Mengxue
Meng, Sheng
author_facet Li, Zhe
Cao, Haijun
Li, Lijuan
Fu, Huixia
Guan, Mengxue
Meng, Sheng
contents Valley topology has emerged as a key concept for realizing new classes of quantum states. Here, we investigate Floquet-engineered topological phase transitions in anisotropic 1T'-WSe$_2$ and its Janus derivative WSeTe monolayers, which exhibit valley-degenerate and valley-polarized characteristics, respectively. In 1T'-WSe$_2$, a single topological-phase-transition (TPT) occurs from the quantum-spin-Hall state (QSH) to the quantum anomalous Hall (QAH) state, involving one spin channel at both valleys simultaneously. In contrast, Janus WSeTe undergoes a two-stage Floquet-driven TPT that occurs within a single valley and sequentially involves two spin components. The intermediate phase manifests as a valley-polarized QAH (vp-QAH) state with a finite valley Chern number, while the final phase evolves into a high-Chern-number QAH state with distinct valley gaps. Furthermore, an in-plane anisotropic response of the TPTs is predicted under oblique light incidence, reflecting the intrinsic low-symmetry nature of the lattice. These findings provide a comprehensive understanding of Floquet-engineered valley-based topological properties and offer guidance for designing light-controllable valleytronic and topological devices.
format Preprint
id arxiv_https___arxiv_org_abs_2511_17661
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Floquet-engineered Valley Topology with Anisotropic Response in 1T'-WSe$_2$ and Janus WSeTe monolayers
Li, Zhe
Cao, Haijun
Li, Lijuan
Fu, Huixia
Guan, Mengxue
Meng, Sheng
Mesoscale and Nanoscale Physics
Materials Science
Valley topology has emerged as a key concept for realizing new classes of quantum states. Here, we investigate Floquet-engineered topological phase transitions in anisotropic 1T'-WSe$_2$ and its Janus derivative WSeTe monolayers, which exhibit valley-degenerate and valley-polarized characteristics, respectively. In 1T'-WSe$_2$, a single topological-phase-transition (TPT) occurs from the quantum-spin-Hall state (QSH) to the quantum anomalous Hall (QAH) state, involving one spin channel at both valleys simultaneously. In contrast, Janus WSeTe undergoes a two-stage Floquet-driven TPT that occurs within a single valley and sequentially involves two spin components. The intermediate phase manifests as a valley-polarized QAH (vp-QAH) state with a finite valley Chern number, while the final phase evolves into a high-Chern-number QAH state with distinct valley gaps. Furthermore, an in-plane anisotropic response of the TPTs is predicted under oblique light incidence, reflecting the intrinsic low-symmetry nature of the lattice. These findings provide a comprehensive understanding of Floquet-engineered valley-based topological properties and offer guidance for designing light-controllable valleytronic and topological devices.
title Floquet-engineered Valley Topology with Anisotropic Response in 1T'-WSe$_2$ and Janus WSeTe monolayers
topic Mesoscale and Nanoscale Physics
Materials Science
url https://arxiv.org/abs/2511.17661