Interface-engineered voltage-driven magnetic tunnel junctions with ultra-low-energy magnetization switching
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arXiv
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| Main Authors: | , , , , , , , , , , , |
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| Format: | Preprint |
| Published: |
2025
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| _version_ | 1866917099779129344 |
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| author | Zhang, Yu Xu, Meng Zhou, Bowei Eckel, Carter Ghosh, Supriya Yun, Hwanhui Habiboglu, Ali Lyu, Deyuan Gopman, Daniel B Wang, Jian-Ping Mkhoyan, K. Andre Wang, Weigang |
| author_facet | Zhang, Yu Xu, Meng Zhou, Bowei Eckel, Carter Ghosh, Supriya Yun, Hwanhui Habiboglu, Ali Lyu, Deyuan Gopman, Daniel B Wang, Jian-Ping Mkhoyan, K. Andre Wang, Weigang |
| contents | Electric-field control of spin states offers a promising route to ultra-low-power, ultra-fast magnetization switching in spintronic devices such as magnetic tunnel junctions (MTJs). Recent progress in modulating spin-orbit interactions at the interfaces between 3d transition-metal ferromagnets and dielectric layers has underscored the role of atomic-scale heavy-metal doping in optimizing device performance. Here, we experimentally demonstrate highly energy-efficient, voltage-driven magnetization switching in MTJs exhibiting large tunnel magnetoresistance (TMR), enabled by a remote doping technique that precisely controls the iridium (Ir) concentration near the MgO-CoFeB interface in the free layer. Our devices achieve a switching energy of only 3.5 fJ per bit for nanoscale MTJs operating in the sub-nanosecond regime, while maintaining a TMR ratio up to 160 percent after 400 C post-annealing. These findings establish a viable pathway toward scalable, ultra-low-power nonvolatile memory, positioning voltage-driven MTJs as strong contenders for next-generation magnetoresistive random-access memory (MRAM) and other emerging spintronic applications. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2511_18143 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Interface-engineered voltage-driven magnetic tunnel junctions with ultra-low-energy magnetization switching Zhang, Yu Xu, Meng Zhou, Bowei Eckel, Carter Ghosh, Supriya Yun, Hwanhui Habiboglu, Ali Lyu, Deyuan Gopman, Daniel B Wang, Jian-Ping Mkhoyan, K. Andre Wang, Weigang Mesoscale and Nanoscale Physics Materials Science Electric-field control of spin states offers a promising route to ultra-low-power, ultra-fast magnetization switching in spintronic devices such as magnetic tunnel junctions (MTJs). Recent progress in modulating spin-orbit interactions at the interfaces between 3d transition-metal ferromagnets and dielectric layers has underscored the role of atomic-scale heavy-metal doping in optimizing device performance. Here, we experimentally demonstrate highly energy-efficient, voltage-driven magnetization switching in MTJs exhibiting large tunnel magnetoresistance (TMR), enabled by a remote doping technique that precisely controls the iridium (Ir) concentration near the MgO-CoFeB interface in the free layer. Our devices achieve a switching energy of only 3.5 fJ per bit for nanoscale MTJs operating in the sub-nanosecond regime, while maintaining a TMR ratio up to 160 percent after 400 C post-annealing. These findings establish a viable pathway toward scalable, ultra-low-power nonvolatile memory, positioning voltage-driven MTJs as strong contenders for next-generation magnetoresistive random-access memory (MRAM) and other emerging spintronic applications. |
| title | Interface-engineered voltage-driven magnetic tunnel junctions with ultra-low-energy magnetization switching |
| topic | Mesoscale and Nanoscale Physics Materials Science |
| url | https://arxiv.org/abs/2511.18143 |