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| Autori principali: | , , , , , , , |
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| Natura: | Preprint |
| Pubblicazione: |
2025
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| Soggetti: | |
| Accesso online: | https://arxiv.org/abs/2511.18778 |
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| _version_ | 1866909920381632512 |
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| author | Mishra, Shivanshu Li, Ruixue Seo, Dongjea Adhikari, Anil Cooper, Lucas G. Dawley, Rebecca A. Bol, Ageeth A. Koester, Steven J. |
| author_facet | Mishra, Shivanshu Li, Ruixue Seo, Dongjea Adhikari, Anil Cooper, Lucas G. Dawley, Rebecca A. Bol, Ageeth A. Koester, Steven J. |
| contents | WSe2 p-MOSFETs with Nb-doped WS2 contacts formed using atomic layer deposition are demonstrated. The devices are fabricated using a technique that aligns the contact metallization with the Nb-doped WS2 contacts using a selective oxidation process. Devices with source/drain spacing of 0.15 um have on-state current of 103 uA/um at VDS = -1 V at a channel carrier concentration of ~ 7.5 x 1012 cm-2. The results provide a promising CMOS-compatible pathway to create low-resistance contacts to 2D-channel transistors. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2511_18778 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | WSe2 p-MOSFETs with Nb-Doped WS2 Contacts Deposited using Atomic Layer Deposition Mishra, Shivanshu Li, Ruixue Seo, Dongjea Adhikari, Anil Cooper, Lucas G. Dawley, Rebecca A. Bol, Ageeth A. Koester, Steven J. Materials Science Mesoscale and Nanoscale Physics WSe2 p-MOSFETs with Nb-doped WS2 contacts formed using atomic layer deposition are demonstrated. The devices are fabricated using a technique that aligns the contact metallization with the Nb-doped WS2 contacts using a selective oxidation process. Devices with source/drain spacing of 0.15 um have on-state current of 103 uA/um at VDS = -1 V at a channel carrier concentration of ~ 7.5 x 1012 cm-2. The results provide a promising CMOS-compatible pathway to create low-resistance contacts to 2D-channel transistors. |
| title | WSe2 p-MOSFETs with Nb-Doped WS2 Contacts Deposited using Atomic Layer Deposition |
| topic | Materials Science Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2511.18778 |