Saved in:
| Main Authors: | , , , , , , , , , , , , , , , , , , , , , |
|---|---|
| Format: | Preprint |
| Published: |
2025
|
| Subjects: | |
| Online Access: | https://arxiv.org/abs/2511.19844 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1866918217509765120 |
|---|---|
| author | Kong, Ziqiang Feng, Yu Gao, Han Sun, Ru Feng, Jian Jiang, Chengxin Liu, Chenxi Wang, Huishan Zhang, Yu Song, Junchi Hao, Xuanzheng Zhang, Ziceng Ma, Yuteng Gao, Shengda Zhu, Ren Noor, Qandeel Ali, Ghulam Yang, Yumeng Yu, Guanghui Tang, Shujie Liu, Zhongkai Wang, Haomin |
| author_facet | Kong, Ziqiang Feng, Yu Gao, Han Sun, Ru Feng, Jian Jiang, Chengxin Liu, Chenxi Wang, Huishan Zhang, Yu Song, Junchi Hao, Xuanzheng Zhang, Ziceng Ma, Yuteng Gao, Shengda Zhu, Ren Noor, Qandeel Ali, Ghulam Yang, Yumeng Yu, Guanghui Tang, Shujie Liu, Zhongkai Wang, Haomin |
| contents | The miniaturization of quantum Hall resistance standards (QHRS) using epitaxial graphene on silicon carbide necessitates understanding how device dimensions impact performance. This study reveals a pronounced scale-dependent carrier density in graphene Hall devices: under electron doping, carrier density decreases with increasing channel width (Wd), while the opposite occurs under hole doping. This phenomenon, most significant for Wd less than 400 um, directly influences the onset of magnetic field required for quantization. Fermi velocity measurements and angle-resolved photoemission spectroscopy (ARPES) analysis indicate that band structure modifications and electron-electron interactions underlie this size dependence. Utilizing machine learning with limited data, we optimized the device geometry, identifying a channel width of ~360 um as the optimal balance between resistance uncertainty and on-chip integration density. This work provides key insights for designing high-performance, miniaturized graphene-based QHRS arrays. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2511_19844 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Pronounced scale-dependent charge carrier density in graphene quantum Hall devices Kong, Ziqiang Feng, Yu Gao, Han Sun, Ru Feng, Jian Jiang, Chengxin Liu, Chenxi Wang, Huishan Zhang, Yu Song, Junchi Hao, Xuanzheng Zhang, Ziceng Ma, Yuteng Gao, Shengda Zhu, Ren Noor, Qandeel Ali, Ghulam Yang, Yumeng Yu, Guanghui Tang, Shujie Liu, Zhongkai Wang, Haomin Mesoscale and Nanoscale Physics Materials Science The miniaturization of quantum Hall resistance standards (QHRS) using epitaxial graphene on silicon carbide necessitates understanding how device dimensions impact performance. This study reveals a pronounced scale-dependent carrier density in graphene Hall devices: under electron doping, carrier density decreases with increasing channel width (Wd), while the opposite occurs under hole doping. This phenomenon, most significant for Wd less than 400 um, directly influences the onset of magnetic field required for quantization. Fermi velocity measurements and angle-resolved photoemission spectroscopy (ARPES) analysis indicate that band structure modifications and electron-electron interactions underlie this size dependence. Utilizing machine learning with limited data, we optimized the device geometry, identifying a channel width of ~360 um as the optimal balance between resistance uncertainty and on-chip integration density. This work provides key insights for designing high-performance, miniaturized graphene-based QHRS arrays. |
| title | Pronounced scale-dependent charge carrier density in graphene quantum Hall devices |
| topic | Mesoscale and Nanoscale Physics Materials Science |
| url | https://arxiv.org/abs/2511.19844 |