Water induced bandgap engineering in nanoribbons of hexagonal boron nitride
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arXiv
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| Autores principales: | , , , , , , , , , , , , , , , |
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| Formato: | Preprint |
| Publicado: |
2025
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| _version_ | 1866915636602470400 |
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| author | Chen, Chen Hang, Yang Wang, Hui Shan Wang, Yang Wang, Xiujun Jiang, Chengxin Feng, Yu Liu, Chenxi Janzen, Eli Edgar, James H. Wei, Zhipeng Guo, Wanlin Hu, Weida Zhang, Zhuhua Wang, Haomin Xie, Xiaoming |
| author_facet | Chen, Chen Hang, Yang Wang, Hui Shan Wang, Yang Wang, Xiujun Jiang, Chengxin Feng, Yu Liu, Chenxi Janzen, Eli Edgar, James H. Wei, Zhipeng Guo, Wanlin Hu, Weida Zhang, Zhuhua Wang, Haomin Xie, Xiaoming |
| contents | Different from hexagonal boron nitride (hBN) sheets, the bandgap of hBN nanoribbons (BNNRs) can be changed by spatial/electrostatic confinement. It has been predicted that a transverse electric field can narrow the bandgap and even cause an insulator-metal transition in BNNRs. However, experimentally introducing an overhigh electric field across the BNNR remains challenging. Here, we theoretically and experimentally demonstrate that water adsorption greatly reduces bandgap of zigzag oriented BNNRs (zBNNRs). Ab initio calculations show that water adsorbed beside the BNNR induces a transverse equivalent electric field of over 2 V/nm thereby reducing its bandgap. Field effect transistors were successfully fabricated from zBNNRs with different widths. The conductance of zBNNRs with adsorbates of water could be tuned over 3 orders in magnitude via electrical field modulation at room temperature. Furthermore, photocurrent response measurements were taken to determine the optical bandgap in zBNNR. Wider zBNNRs exhibit a bandgap down to 1.17 eV. This study yields fundamental insights in new routes toward realizing electronic/optoelectronic devices and circuits based on hexagonal boron nitride. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2511_19862 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Water induced bandgap engineering in nanoribbons of hexagonal boron nitride Chen, Chen Hang, Yang Wang, Hui Shan Wang, Yang Wang, Xiujun Jiang, Chengxin Feng, Yu Liu, Chenxi Janzen, Eli Edgar, James H. Wei, Zhipeng Guo, Wanlin Hu, Weida Zhang, Zhuhua Wang, Haomin Xie, Xiaoming Materials Science Mesoscale and Nanoscale Physics Different from hexagonal boron nitride (hBN) sheets, the bandgap of hBN nanoribbons (BNNRs) can be changed by spatial/electrostatic confinement. It has been predicted that a transverse electric field can narrow the bandgap and even cause an insulator-metal transition in BNNRs. However, experimentally introducing an overhigh electric field across the BNNR remains challenging. Here, we theoretically and experimentally demonstrate that water adsorption greatly reduces bandgap of zigzag oriented BNNRs (zBNNRs). Ab initio calculations show that water adsorbed beside the BNNR induces a transverse equivalent electric field of over 2 V/nm thereby reducing its bandgap. Field effect transistors were successfully fabricated from zBNNRs with different widths. The conductance of zBNNRs with adsorbates of water could be tuned over 3 orders in magnitude via electrical field modulation at room temperature. Furthermore, photocurrent response measurements were taken to determine the optical bandgap in zBNNR. Wider zBNNRs exhibit a bandgap down to 1.17 eV. This study yields fundamental insights in new routes toward realizing electronic/optoelectronic devices and circuits based on hexagonal boron nitride. |
| title | Water induced bandgap engineering in nanoribbons of hexagonal boron nitride |
| topic | Materials Science Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2511.19862 |