Valley physics in the two bands $\mathbf{k}\cdot\mathbf{p}$ model for SiGe heterostructures and spin qubits
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| Main Authors: | , , , , |
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| Format: | Preprint |
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2025
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| _version_ | 1866915836462104576 |
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| author | Salamone, Tancredi Diaz, Biel Martinez Li, Jing Cvitkovich, Lukas Niquet, Yann-Michel |
| author_facet | Salamone, Tancredi Diaz, Biel Martinez Li, Jing Cvitkovich, Lukas Niquet, Yann-Michel |
| contents | We discuss the choice and implementation of inter-valley potentials in the so-called two bands $\mathbf{k}\cdot\mathbf{p}$ model for the opposite $X$, $Y$ or $Z$ valleys of silicon. We focus on the description of valley splittings in Si/SiGe heterostructures for spin qubits, with a particular attention to alloy disorder. We demonstrate that the two bands $\mathbf{k}\cdot\mathbf{p}$ model reproduces the valley splittings of atomistic tight-binding calculations in relevant heterostructures (SiGe spikes, wiggle wells...), yet at a much lower cost. We show that the model also captures the effects of valley-orbit mixing and yields the correct inter-valley dipole matrix elements that characterize manipulation, dephasing and relaxation in spin/valley qubits. We simulate a realistic Si/SiGe spin qubit device as an illustration, and discuss electron-phonon interactions in the two bands $\mathbf{k}\cdot\mathbf{p}$ model. Beyond spin qubits, this model enables efficient simulations of SiGe heterostructure devices where spin and valley physics are relevant. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2511_20153 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Valley physics in the two bands $\mathbf{k}\cdot\mathbf{p}$ model for SiGe heterostructures and spin qubits Salamone, Tancredi Diaz, Biel Martinez Li, Jing Cvitkovich, Lukas Niquet, Yann-Michel Mesoscale and Nanoscale Physics We discuss the choice and implementation of inter-valley potentials in the so-called two bands $\mathbf{k}\cdot\mathbf{p}$ model for the opposite $X$, $Y$ or $Z$ valleys of silicon. We focus on the description of valley splittings in Si/SiGe heterostructures for spin qubits, with a particular attention to alloy disorder. We demonstrate that the two bands $\mathbf{k}\cdot\mathbf{p}$ model reproduces the valley splittings of atomistic tight-binding calculations in relevant heterostructures (SiGe spikes, wiggle wells...), yet at a much lower cost. We show that the model also captures the effects of valley-orbit mixing and yields the correct inter-valley dipole matrix elements that characterize manipulation, dephasing and relaxation in spin/valley qubits. We simulate a realistic Si/SiGe spin qubit device as an illustration, and discuss electron-phonon interactions in the two bands $\mathbf{k}\cdot\mathbf{p}$ model. Beyond spin qubits, this model enables efficient simulations of SiGe heterostructure devices where spin and valley physics are relevant. |
| title | Valley physics in the two bands $\mathbf{k}\cdot\mathbf{p}$ model for SiGe heterostructures and spin qubits |
| topic | Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2511.20153 |