Carrier transport and electrical bandgaps in epitaxial CrN layers
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arXiv
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| Format: | Preprint |
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2025
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| _version_ | 1866915637595471872 |
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| author | Dinh, Duc V. Herfort, Jens Fiedler, Andreas Brandt, Oliver |
| author_facet | Dinh, Duc V. Herfort, Jens Fiedler, Andreas Brandt, Oliver |
| contents | The transport properties and electrical bandgap of nominally undoped ~75-nm-thick CrN layers simultaneously grown on AlN(0001) and AlN(11\bar{2}2) templates using plasma-assisted molecular beam epitaxy are investigated. The layers grown on AlN(0001) and AlN(11\bar{2}2) exhibit (111) and (113) surface orientations, respectively. All layers exhibit antiferromagnetism with a Néel temperature of ~280 K, observed by temperature-dependent magnetic and electrical measurements. Hall-effect measurements demonstrate n-type semiconducting behavior across a wide temperature range from 4 to 920 K. At low temperatures (4 - 260 K), the data show parallel conduction channels from a metallic impurity band and the conduction band. The carrier mobility exhibits a temperature dependence consistent with a nondegenerate semiconductor, governed by ionized-impurity scattering below 400 K and phonon scattering above 400 K. An analysis of the temperature-dependent carrier density between 300 and 920 K yields two activation energies associated with intrinsic conduction: 0.15 eV (with an uncertainty of -0.02/+0.10 eV), which we attribute to the fundamental bandgap, and 0.50 eV (with an uncertainty of -0.05/+0.15 eV) representing a higher energy transition. |
| format | Preprint |
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arxiv_https___arxiv_org_abs_2511_20625 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Carrier transport and electrical bandgaps in epitaxial CrN layers Dinh, Duc V. Herfort, Jens Fiedler, Andreas Brandt, Oliver Materials Science The transport properties and electrical bandgap of nominally undoped ~75-nm-thick CrN layers simultaneously grown on AlN(0001) and AlN(11\bar{2}2) templates using plasma-assisted molecular beam epitaxy are investigated. The layers grown on AlN(0001) and AlN(11\bar{2}2) exhibit (111) and (113) surface orientations, respectively. All layers exhibit antiferromagnetism with a Néel temperature of ~280 K, observed by temperature-dependent magnetic and electrical measurements. Hall-effect measurements demonstrate n-type semiconducting behavior across a wide temperature range from 4 to 920 K. At low temperatures (4 - 260 K), the data show parallel conduction channels from a metallic impurity band and the conduction band. The carrier mobility exhibits a temperature dependence consistent with a nondegenerate semiconductor, governed by ionized-impurity scattering below 400 K and phonon scattering above 400 K. An analysis of the temperature-dependent carrier density between 300 and 920 K yields two activation energies associated with intrinsic conduction: 0.15 eV (with an uncertainty of -0.02/+0.10 eV), which we attribute to the fundamental bandgap, and 0.50 eV (with an uncertainty of -0.05/+0.15 eV) representing a higher energy transition. |
| title | Carrier transport and electrical bandgaps in epitaxial CrN layers |
| topic | Materials Science |
| url | https://arxiv.org/abs/2511.20625 |