Evaluating the Effective Segregation Coefficient in High-Purity Germanium (HPGe) Crystals for Ge Detector Development in Rare-Event Searches
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arXiv
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| Main Authors: | , , , , , , , |
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| Format: | Preprint |
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2025
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| _version_ | 1866918218285711360 |
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| author | Chhetri, S. Mei, D. -M. Bhattarai, S. Budhathoki, N. Warren, A. Dong, K. -M. Panamaldeniya, S. A. Prem, A. |
| author_facet | Chhetri, S. Mei, D. -M. Bhattarai, S. Budhathoki, N. Warren, A. Dong, K. -M. Panamaldeniya, S. A. Prem, A. |
| contents | The performance and scalability of rare-event physics experiments depend on large-volume, detector-grade high-purity germanium (HPGe) crystals with precise control of impurity segregation during growth. We report a detailed study of impurity distribution in a single Czochralski-grown HPGe crystal produced at University of South Dakota (USD). The crystal was sectioned longitudinally into 37 segments, enabling the first high-resolution and systematic mapping of dopant profiles along the length of a detector-grade HPGe boule. Hall-effect measurements were used to extract impurity concentrations for boron (B), aluminum (Al), gallium (Ga), and phosphorus (P) in each segment. From these data, we determine effective segregation coefficients ($K_{eff}$) and initial melt concentrations ($C_0$) for the dominant dopants and compare them with classical Burton-Prim-Slichter expectations. The results provide quantitative insight into impurity transport and melt-solid partitioning under realistic detector growth conditions. These findings inform process-optimization strategies for HPGe crystal pulling, improve impurity control along the boule, and support the reliable fabrication of large, low-background HPGe detectors for next-generation rare-event searches. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2511_20879 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Evaluating the Effective Segregation Coefficient in High-Purity Germanium (HPGe) Crystals for Ge Detector Development in Rare-Event Searches Chhetri, S. Mei, D. -M. Bhattarai, S. Budhathoki, N. Warren, A. Dong, K. -M. Panamaldeniya, S. A. Prem, A. Instrumentation and Detectors Applied Physics The performance and scalability of rare-event physics experiments depend on large-volume, detector-grade high-purity germanium (HPGe) crystals with precise control of impurity segregation during growth. We report a detailed study of impurity distribution in a single Czochralski-grown HPGe crystal produced at University of South Dakota (USD). The crystal was sectioned longitudinally into 37 segments, enabling the first high-resolution and systematic mapping of dopant profiles along the length of a detector-grade HPGe boule. Hall-effect measurements were used to extract impurity concentrations for boron (B), aluminum (Al), gallium (Ga), and phosphorus (P) in each segment. From these data, we determine effective segregation coefficients ($K_{eff}$) and initial melt concentrations ($C_0$) for the dominant dopants and compare them with classical Burton-Prim-Slichter expectations. The results provide quantitative insight into impurity transport and melt-solid partitioning under realistic detector growth conditions. These findings inform process-optimization strategies for HPGe crystal pulling, improve impurity control along the boule, and support the reliable fabrication of large, low-background HPGe detectors for next-generation rare-event searches. |
| title | Evaluating the Effective Segregation Coefficient in High-Purity Germanium (HPGe) Crystals for Ge Detector Development in Rare-Event Searches |
| topic | Instrumentation and Detectors Applied Physics |
| url | https://arxiv.org/abs/2511.20879 |