Edge-state transport in gapped bilayer graphene

Fuente: arXiv
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Main Authors: Sánchez-Sánchez, Jesús Arturo, Stegmann, Thomas
Format: Preprint
Published: 2025
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author Sánchez-Sánchez, Jesús Arturo
Stegmann, Thomas
author_facet Sánchez-Sánchez, Jesús Arturo
Stegmann, Thomas
contents We investigate electronic transport in gapped bilayer graphene (gBLG) devices. For certain edge terminations -typically a combination of zigzag, armchair, and bearded types - we observe edge state conduction within the band gap, which is opened by a potential bias between the two layers. The edge states can generate a non-local resistance, in line with recent experiments [1]. Band structure calculations of gBLG nanoribbons corroborate the existence of the edge states, whose edge localization can be switched by tuning the electron energy. Their existence strongly depends on the edge termination and does not originate from a topological bulk-boundary correspondence.
format Preprint
id arxiv_https___arxiv_org_abs_2511_21049
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Edge-state transport in gapped bilayer graphene
Sánchez-Sánchez, Jesús Arturo
Stegmann, Thomas
Mesoscale and Nanoscale Physics
We investigate electronic transport in gapped bilayer graphene (gBLG) devices. For certain edge terminations -typically a combination of zigzag, armchair, and bearded types - we observe edge state conduction within the band gap, which is opened by a potential bias between the two layers. The edge states can generate a non-local resistance, in line with recent experiments [1]. Band structure calculations of gBLG nanoribbons corroborate the existence of the edge states, whose edge localization can be switched by tuning the electron energy. Their existence strongly depends on the edge termination and does not originate from a topological bulk-boundary correspondence.
title Edge-state transport in gapped bilayer graphene
topic Mesoscale and Nanoscale Physics
url https://arxiv.org/abs/2511.21049