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| Format: | Preprint |
| Published: |
2025
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2511.21348 |
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| _version_ | 1866909926576619520 |
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| author | Wang, Qiao |
| author_facet | Wang, Qiao |
| contents | This paper reports the first gas sensor based on the plastic inorganic semiconductor GaPS4, pioneering the application of plastic inorganic semiconductors in the field of gas sensing. Unlike traditional rigid sensors, this device leverages the unique layered structure and ultra-wide bandgap of GaPS4 to achieve high sensitivity and selectivity in detecting NO2. The intrinsic plastic deformability of the material enables it to conform tightly to complex curved pipelines like an "electronic bandage," completely eliminating monitoring blind spots. Nanoindentation tests reveal that its extremely low hardness (0.20 GPa) confers exceptional flexibility while maintaining stable electrical characteristics even under bent states. The device exhibits a linear response to NO2 concentrations ranging from 1 to 10 ppm at room temperature. Although the limited defects in the single-crystal material result in pA-level response currents, defect engineering offers a viable pathway for performance enhancement. This study breaks through the conventional boundaries of plastic inorganic semiconductors confined to photoelectric and thermoelectric applications, opening new avenues for their use in gas sensing and advancing gas monitoring technology toward "conformal integration." |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2511_21348 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Design of a Plastic Inorganic Semiconductor GaPS4-Based Gas Sensor for Conformal Monitoring of Gas Lines Wang, Qiao Chemical Physics This paper reports the first gas sensor based on the plastic inorganic semiconductor GaPS4, pioneering the application of plastic inorganic semiconductors in the field of gas sensing. Unlike traditional rigid sensors, this device leverages the unique layered structure and ultra-wide bandgap of GaPS4 to achieve high sensitivity and selectivity in detecting NO2. The intrinsic plastic deformability of the material enables it to conform tightly to complex curved pipelines like an "electronic bandage," completely eliminating monitoring blind spots. Nanoindentation tests reveal that its extremely low hardness (0.20 GPa) confers exceptional flexibility while maintaining stable electrical characteristics even under bent states. The device exhibits a linear response to NO2 concentrations ranging from 1 to 10 ppm at room temperature. Although the limited defects in the single-crystal material result in pA-level response currents, defect engineering offers a viable pathway for performance enhancement. This study breaks through the conventional boundaries of plastic inorganic semiconductors confined to photoelectric and thermoelectric applications, opening new avenues for their use in gas sensing and advancing gas monitoring technology toward "conformal integration." |
| title | Design of a Plastic Inorganic Semiconductor GaPS4-Based Gas Sensor for Conformal Monitoring of Gas Lines |
| topic | Chemical Physics |
| url | https://arxiv.org/abs/2511.21348 |