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| Main Authors: | , , |
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| Format: | Preprint |
| Published: |
2025
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2511.21494 |
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Table of Contents:
- We present a unified bond dipole theory for metal-semiconductor interfaces to explain the microscopic origin of interface dipoles and Fermi level pinning (FLP) in terms of Harrison's bond-orbital model. By combining first-principles calculations with tight-binding analysis, we show that localized bonding between semiconductor surface dangling bonds and metal orbitals is sufficient to generate a large interface dipole and induce strong FLP, even when only a single metal monolayer is present. Within this framework, metal-induced gap states (MIGS), dangling-bond-induced surface states (DBSS), and bonding states embedded in the valence band are all understood as different outcomes of the same underlying interface bonding mechanism, rather than as independent causes of FLP. We further establish that the key parameter governing FLP strength is the density of surface dangling bonds that can form new chemical bonds with the metal, which directly controls the magnitude of the bond-induced interface dipole. This picture naturally explains the weaker pinning observed in more ionic semiconductors than in covalent ones and provides practical guidance for engineering metal-semiconductor interfaces and tuning Schottky barrier heights.