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| Main Authors: | , , , , |
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| Format: | Preprint |
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2025
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| Online Access: | https://arxiv.org/abs/2511.22063 |
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| _version_ | 1866914172491530240 |
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| author | Kim, Jisun Kim, Yoosuk Park, Seung-Ho Ko, Yong Hun Park, Chong-Yun |
| author_facet | Kim, Jisun Kim, Yoosuk Park, Seung-Ho Ko, Yong Hun Park, Chong-Yun |
| contents | Two-dimensional tungsten disulfide (WS2) is a promising semiconductor for next-generation optoelectronic and photovoltaic devices, but scalable routes to uniform, large-area films remain challenging. In this study, a systematic thermal chemical vapor deposition (T-CVD) strategy is presented to synthesize centimeter-scale WS2 thin films by sulfurizing tungsten (W) precursors in a controlled sulfur vapor environment. High-purity sputtered W thin films on SiO2/Si and W foils were sulfurized at temperatures between 400 and 1000 C, with Raman spectroscopy identifying 800 C as the optimal growth temperature. Under these conditions, the films exhibit the characteristic E12g (349.7 cm-1) and A1g (416.8 cm-1) modes with narrow full-width at half-maximum values, indicative of high crystallinity and controlled thickness. Optical microscopy, scanning electron microscopy, atomic force microscopy, transmission electron microscopy, and X-ray photoelectron spectroscopy collectively validate the creation of stoichiometric, layered WS2 with significantly enhanced uniformity and diminished roughness when utilizing sputtered W thin films in contrast to W foils. Leveraging this optimized process, WS2 films grown on W foils were transferred onto target substrates, including indium tin oxide (ITO)-coated glass, using a PMMA-assisted wet-transfer method that preserves structural integrity over large areas. Schottky-barrier solar cells with an Au/WS2/ITO architecture fabricated from these films deliver a short-circuit current density of 7.91 mA cm-2, an open-circuit voltage of 0.495 V, and a power conversion efficiency of 1.45 percent. These results demonstrate that sulfurization of W thin films and foils via T-CVD provides a scalable, substrate-compatible platform for integrating WS2 into practical optoelectronic and low-cost photovoltaic technologies. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2511_22063 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Scalable Synthesis of Large-Area WS2 Thin Films from Tungsten Precursors by Thermal CVD and Their Application in Schottky-Barrier Solar Cells Kim, Jisun Kim, Yoosuk Park, Seung-Ho Ko, Yong Hun Park, Chong-Yun Materials Science Applied Physics Two-dimensional tungsten disulfide (WS2) is a promising semiconductor for next-generation optoelectronic and photovoltaic devices, but scalable routes to uniform, large-area films remain challenging. In this study, a systematic thermal chemical vapor deposition (T-CVD) strategy is presented to synthesize centimeter-scale WS2 thin films by sulfurizing tungsten (W) precursors in a controlled sulfur vapor environment. High-purity sputtered W thin films on SiO2/Si and W foils were sulfurized at temperatures between 400 and 1000 C, with Raman spectroscopy identifying 800 C as the optimal growth temperature. Under these conditions, the films exhibit the characteristic E12g (349.7 cm-1) and A1g (416.8 cm-1) modes with narrow full-width at half-maximum values, indicative of high crystallinity and controlled thickness. Optical microscopy, scanning electron microscopy, atomic force microscopy, transmission electron microscopy, and X-ray photoelectron spectroscopy collectively validate the creation of stoichiometric, layered WS2 with significantly enhanced uniformity and diminished roughness when utilizing sputtered W thin films in contrast to W foils. Leveraging this optimized process, WS2 films grown on W foils were transferred onto target substrates, including indium tin oxide (ITO)-coated glass, using a PMMA-assisted wet-transfer method that preserves structural integrity over large areas. Schottky-barrier solar cells with an Au/WS2/ITO architecture fabricated from these films deliver a short-circuit current density of 7.91 mA cm-2, an open-circuit voltage of 0.495 V, and a power conversion efficiency of 1.45 percent. These results demonstrate that sulfurization of W thin films and foils via T-CVD provides a scalable, substrate-compatible platform for integrating WS2 into practical optoelectronic and low-cost photovoltaic technologies. |
| title | Scalable Synthesis of Large-Area WS2 Thin Films from Tungsten Precursors by Thermal CVD and Their Application in Schottky-Barrier Solar Cells |
| topic | Materials Science Applied Physics |
| url | https://arxiv.org/abs/2511.22063 |