Cover Image

Deep-Cryogenic Modeling of 22-nm FDSOI MOSFETs based on BSIM-IMG

Fuente: arXiv

Saved in:

Bibliographic Details
Main Authors:	Dutta, Debargha, Ture, Kerim, Olivieri, Fabio, Gomez-Saiz, Alberto, Noah, Grayson M.
Format:	Preprint
Published:	2025
Subjects:	Mesoscale and Nanoscale Physics
Online Access:	Acceder al recurso
Tags:	Add Tag No Tags, Be the first to tag this record!

Similar Items

Large-scale characterization of Single-Hole Transistors in 22-nm FDSOI CMOS Technology
by: Swift, Thomas H., et al.
Published: (2025)

DC Cryogenic Modeling of Open-Source SkyWater 130 nm MOSFETs at 77 K Using BSIM4
by: Beall, F., et al.
Published: (2026)

Method for efficient large-scale cryogenic characterization of CMOS technologies
by: Eastoe, Jonathan, et al.
Published: (2024)

Spin Readout in a 22 nm Node Integrated Circuit
by: Clarke, Isobel C., et al.
Published: (2025)

Compact frequency multiplexed readout of silicon quantum dots in monolithic FDSOI 28nm technology
by: Schmidt, Quentin, et al.
Published: (2024)

Measurement of cryoelectronics heating using a local quantum dot thermometer in silicon
by: de Kruijf, Mathieu, et al.
Published: (2023)

A Multi-Module Silicon-On-Insulator Chip Assembly Containing Quantum Dots and Cryogenic Radio-Frequency Readout Electronics
by: Ibberson, David J., et al.
Published: (2024)

CMOS on-chip thermometry at deep cryogenic temperatures
by: Noah, Grayson M., et al.
Published: (2023)

Microscopic Modeling of Surface Roughness Scattering in Inversion Layers of MOSFETs Based on Ando's Linear Model
by: Sano, Nobuyuki
Published: (2026)

28nm Fully-Depleted SOI Technology: Cryogenic Control Electronics for Quantum Computing
by: Bohuslavskyi, H., et al.
Published: (2019)

Holes in silicon are heavier than expected: transport properties of extremely high mobility electrons and holes in silicon MOSFETs
by: Wendoloski, J. P., et al.
Published: (2025)

Cryogenic microwave frequency combs based on quantum paraelectric superconducting resonators
by: Muragesh, Prasad, et al.
Published: (2026)

Compact Quantum Dot Models for Analog Microwave co-Simulation
by: Peri, Lorenzo, et al.
Published: (2025)

Cryogenic In-Memory Computing with Phase-Change Memory
by: Lombardo, Davide G. F., et al.
Published: (2025)

Millikelvin Si-MOSFETs for Quantum Electronics
by: Yurttagül, Nikolai, et al.
Published: (2024)

Rapid cryogenic characterisation of 1024 integrated silicon quantum dots
by: Thomas, Edward J., et al.
Published: (2023)

Cryogenic nano-imaging of second-order moiré superlattices
by: Hesp, Niels C. H., et al.
Published: (2023)

Multilayer Cryogenic Powder Filters with Low Parasitic Capacitance
by: Pradhan, Itishree, et al.
Published: (2025)

Cryogenic hybrid magnonic circuits based on spalled YIG thin films
by: Xu, Jing, et al.
Published: (2023)

Ab-initio-NEGF Fundamental Roadmap for Carbon-Nanotube and Two-Dimensional-Material MOSFETs at the Scaling and VDD Limit
by: Afzalian, Aryan
Published: (2025)

Cryogenic Multiplexing with Bottom-Up Nanowires
by: Olšteins, Dāgs, et al.
Published: (2023)

A superinductor in a deep sub-micron integrated circuit
by: Swift, T. H., et al.
Published: (2025)

A Methodology for Process Design Kit Re-Centering Using TCAD and Experimental Data for Cryogenic Temperatures
by: Dutta, Tapas, et al.
Published: (2025)

Flat Bands in Three-dimensional Lattice Models with Non-trivial Hopf Index
by: Dutta, Ivan, et al.
Published: (2023)

Hysteresis Measurements as a Diagnostic Tool: A Systematic Approach for Stability Benchmarking and Performance Projection of 2D-Materials-Based MOSFETs
by: Karl, Alexander, et al.
Published: (2025)

Cryogenic interface-state filling and tunneling mechanisms in strained Ge/SiGe heterostructures
by: Ma, Jingrui, et al.
Published: (2026)

Cryogenic Nano-Imaging of Excitons in a Monolayer Semiconductor
by: Roche, Anna, et al.
Published: (2025)

Cryogenic pressure sensing with an ultrafast Meissner-levitated microrotor
by: Jose, Joel K, et al.
Published: (2025)

WSe2 p-MOSFETs with Nb-Doped WS2 Contacts Deposited using Atomic Layer Deposition
by: Mishra, Shivanshu, et al.
Published: (2025)

Commercial CMOS Process for Quantum Computing: Quantum Dots and Charge Sensing in a 22 nm Fully Depleted Silicon-on-Insulator Process
by: Amitonov, S. V., et al.
Published: (2024)

Gain and Threshold Improvements of 1300 nm Lasers based on InGaAs/InAlGaAs Superlattice Active Regions
by: Babichev, Andrey, et al.
Published: (2024)

Cascaded Four-Wave Mixing on Quantum Paraelectrics for On-chip Cryogenic Microcombs
by: Sundaresan, Harikrishnan, et al.
Published: (2026)

Cryogenic Loss Limits in Microwave Epitaxial AlN Acoustic Resonators
by: Gulupalli, Hemant, et al.
Published: (2026)

Enhanced Non-Ohmic Drain Resistance of 2DFETs at Cryogenic Temperature
by: Wong, Kwok-Ho, et al.
Published: (2025)

Cryogenic performance of field-effect transistors and amplifiers based on selective area grown InAs nanowires
by: Meucci, Giulia, et al.
Published: (2025)

A Modular Cryogenic Link for Microwave Quantum Communication Over Distances of Tens of Meters
by: Schär, Josua D., et al.
Published: (2026)

High-resolution Cryogenic Spectroscopy of Single Molecules in Nanoprinted Crystals
by: Musavinezhad, Mohammad, et al.
Published: (2024)

Designing Extremely Low-Power Topological Transistors with 1T'-MoS2 and HZO for Cryogenic Applications
by: Park, Yosep, et al.
Published: (2026)

Non-equilibrium Dynamics of Two-level Systems directly after Cryogenic Alternating Bias
by: Iaia, V., et al.
Published: (2025)

Bilayer TeO2: The First Oxide Semiconductor with Symmetric Sub-5-nm NMOS and PMOS
by: Xu, Linqiang, et al.
Published: (2024)