Saved in:
| Main Authors: | , , , , |
|---|---|
| Format: | Preprint |
| Published: |
2025
|
| Subjects: | |
| Online Access: | https://arxiv.org/abs/2511.22485 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Table of Contents:
- We report electrical spin state readout and coherent control of an ensemble ($\sim$540) of silicon vacancies ($\mathrm{V}_{\mathrm{Si}}^{-}$) in a silicon carbide-on-insulator (SiCOI) platform, with excitation wavelengths from 780 to 990 nm, demonstrating for the first time spin state readout well beyond the zero phonon line of the V2 $\mathrm{V}_{\mathrm{Si}}^{-}$. By implementing photoelectrical detection of magnetic resonance in thin-film SiCOI, we merge a scalable spin readout technique requiring no collection optics, together with a promising platform for future scalable and CMOS-compatible integrated photonics. Furthermore, we provide a comparison of optical and electrical readout between bulk silicon carbide (SiC) and thin-film SiCOI, revealing that our thin-film processing has a measured $T_2$ coherence time of $\approx 7 μ$s , similar to that in the bulk SiC. These results extend the capabilities of SiCOI toward electronic and spin-based devices for scalable quantum technologies over a wide range of excitation wavelengths.