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| Main Authors: | , , , , |
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| Format: | Preprint |
| Published: |
2025
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2511.22980 |
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| _version_ | 1866912803705585664 |
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| author | Ren, Yulu Shen, Yang Xu, Chengyang Shan, Wanfei Luo, Weidong |
| author_facet | Ren, Yulu Shen, Yang Xu, Chengyang Shan, Wanfei Luo, Weidong |
| contents | ABCB-stacked tetralayer graphene, with intrinsic spontaneous polarization, offers a unique platform to explore electron correlation effects, whose interplay with spin-orbit coupling may engender topological phases. Here, employing a $\mathbf{k}\cdot\mathbf{p}$ model with self-consistent Hartree-Fock calculations, we investigate its electronic ground states. Remarkably, we find that the intrinsic polarization, in conjunction with strong interactions ($U=8 \text{ eV}$) and SOC, is sufficient to drive a $C=3$ quantum anomalous Hall state, obviating the need for an external electric field typical in ABCA stacks. Conversely, at moderate interactions ($U=6 \text{ eV}$), a minimal electric field is necessary. Furthermore, calculations predict other correlation-driven metallic phases such as quarter- and three-quarter-filled states. These results establish that the synergy of intrinsic polarization, correlations, and SOC governs the rich topological phenomena, suggesting ABCB-stacked graphene as a highly tunable platform for exploring emergent topological phenomena. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2511_22980 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Interaction-Driven Chern Insulator at Zero Electric Field in ABCB-Stacked Tetralayer Graphene Ren, Yulu Shen, Yang Xu, Chengyang Shan, Wanfei Luo, Weidong Mesoscale and Nanoscale Physics Computational Physics ABCB-stacked tetralayer graphene, with intrinsic spontaneous polarization, offers a unique platform to explore electron correlation effects, whose interplay with spin-orbit coupling may engender topological phases. Here, employing a $\mathbf{k}\cdot\mathbf{p}$ model with self-consistent Hartree-Fock calculations, we investigate its electronic ground states. Remarkably, we find that the intrinsic polarization, in conjunction with strong interactions ($U=8 \text{ eV}$) and SOC, is sufficient to drive a $C=3$ quantum anomalous Hall state, obviating the need for an external electric field typical in ABCA stacks. Conversely, at moderate interactions ($U=6 \text{ eV}$), a minimal electric field is necessary. Furthermore, calculations predict other correlation-driven metallic phases such as quarter- and three-quarter-filled states. These results establish that the synergy of intrinsic polarization, correlations, and SOC governs the rich topological phenomena, suggesting ABCB-stacked graphene as a highly tunable platform for exploring emergent topological phenomena. |
| title | Interaction-Driven Chern Insulator at Zero Electric Field in ABCB-Stacked Tetralayer Graphene |
| topic | Mesoscale and Nanoscale Physics Computational Physics |
| url | https://arxiv.org/abs/2511.22980 |