Guardado en:
| Autores principales: | , , , , , , , , , , , , , |
|---|---|
| Formato: | Preprint |
| Publicado: |
2025
|
| Materias: | |
| Acceso en línea: | https://arxiv.org/abs/2512.00394 |
| Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|
| _version_ | 1866908681540468736 |
|---|---|
| author | Huhtasaari, Johanna Palakulam, Joyal Jain Salha, Awse Hyldgaard, Per Schröder, Elsebeth Berntsen, Magnus Hårdensson Tjernberg, Oscar Shah, Manasi Martinez-Duarte, Rodrigo He, Hans Hofmann, Johannes Bauch, Thilo Shetty, Naveen Lara-Avila, Samuel |
| author_facet | Huhtasaari, Johanna Palakulam, Joyal Jain Salha, Awse Hyldgaard, Per Schröder, Elsebeth Berntsen, Magnus Hårdensson Tjernberg, Oscar Shah, Manasi Martinez-Duarte, Rodrigo He, Hans Hofmann, Johannes Bauch, Thilo Shetty, Naveen Lara-Avila, Samuel |
| contents | Producing large-area single-crystalline graphene is key to realizing its full potential in advanced applications, including twistronics. Yet, controlling graphene growth kinetics to avoid grain boundaries or multilayer growth remains challenging. Here, we demonstrate single-crystalline graphene free from multilayer domains via one-step delamination of epitaxial graphene from silicon carbide (SiC). This is enabled by a specific surface reconstruction of 4H-SiC(0001) achieved in our growth conditions. High crystalline quality is confirmed by the observation of the half-integer quantum Hall effect -- the hallmark of monolayer graphene -- in near cm-sized crystals. The scalability of our process, explored with 4''-wafers, represents an advance toward large-scale integration of high-performance graphene applications. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2512_00394 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Wafer-Scale Single-Crystalline Monolayer Graphene Huhtasaari, Johanna Palakulam, Joyal Jain Salha, Awse Hyldgaard, Per Schröder, Elsebeth Berntsen, Magnus Hårdensson Tjernberg, Oscar Shah, Manasi Martinez-Duarte, Rodrigo He, Hans Hofmann, Johannes Bauch, Thilo Shetty, Naveen Lara-Avila, Samuel Mesoscale and Nanoscale Physics Producing large-area single-crystalline graphene is key to realizing its full potential in advanced applications, including twistronics. Yet, controlling graphene growth kinetics to avoid grain boundaries or multilayer growth remains challenging. Here, we demonstrate single-crystalline graphene free from multilayer domains via one-step delamination of epitaxial graphene from silicon carbide (SiC). This is enabled by a specific surface reconstruction of 4H-SiC(0001) achieved in our growth conditions. High crystalline quality is confirmed by the observation of the half-integer quantum Hall effect -- the hallmark of monolayer graphene -- in near cm-sized crystals. The scalability of our process, explored with 4''-wafers, represents an advance toward large-scale integration of high-performance graphene applications. |
| title | Wafer-Scale Single-Crystalline Monolayer Graphene |
| topic | Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2512.00394 |