Documenti analoghi

• Four-fold Anisotropic Magnetoresistance in Antiferromagnetic Epitaxial Thin Films of MnPt$_{x}$Pd$_{1-x}$
  di: Yadav, Shivesh, et al.
  Pubblicazione: (2024)
• Effect of Barrier Layer Metal (X = Re, Mo, Ni, Ti, and Pd) on the Characteristics of Re–Al–X–Au‐Based Ohmic Contacts on n‐GaN
  di: Amit P. Shah, et al.
  Pubblicazione: (2025)
• Evolution of surface microstructure of Re‐Al‐Ni‐Au based ohmic contacts on n‐type GaN
  di: Amit P. Shah, et al.
  Pubblicazione: (2024)
• Imprinting electrically switchable scalar spin chirality by anisotropic strain in a Kagome antiferromagnet
  di: Paul, Debjoty, et al.
  Pubblicazione: (2024)
• Imprinting Electrically Switchable Scalar Spin Chirality by Anisotropic Strain in a Kagome Antiferromagnet
  di: Debjoty Paul, et al.
  Pubblicazione: (2025)