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Hauptverfasser: Hu, Yucheng, Washbrook, Ece, Oli, Arivazhagan Valluvar, Griesi, Andrea, Ivanov, Yurii P., Pelling, Mariam, Fairclough, Simon M., Kaur, Kulwinder, Melchiorre, Michele, Hultqvist, Adam, Törndahl, Tobias, Hempel, Wolfram, Witte, Wolfram, Divitini, Giorgio, Siebentritt, Susanne, Oliver, Rachel A., Kusch, Gunnar
Format: Preprint
Veröffentlicht: 2025
Schlagworte:
Online-Zugang:https://arxiv.org/abs/2512.01459
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author Hu, Yucheng
Washbrook, Ece
Oli, Arivazhagan Valluvar
Griesi, Andrea
Ivanov, Yurii P.
Pelling, Mariam
Fairclough, Simon M.
Kaur, Kulwinder
Melchiorre, Michele
Hultqvist, Adam
Törndahl, Tobias
Hempel, Wolfram
Witte, Wolfram
Divitini, Giorgio
Siebentritt, Susanne
Oliver, Rachel A.
Kusch, Gunnar
author_facet Hu, Yucheng
Washbrook, Ece
Oli, Arivazhagan Valluvar
Griesi, Andrea
Ivanov, Yurii P.
Pelling, Mariam
Fairclough, Simon M.
Kaur, Kulwinder
Melchiorre, Michele
Hultqvist, Adam
Törndahl, Tobias
Hempel, Wolfram
Witte, Wolfram
Divitini, Giorgio
Siebentritt, Susanne
Oliver, Rachel A.
Kusch, Gunnar
contents Sulfide chalcopyrite Cu(In,Ga)S2 (CIGS) is a wide bandgap semiconductor suitable for the top cell of a tandem solar device. Here we demonstrate significant improvements in absorber quality by alloying with Ag to form (Ag,Cu)(In,Ga)S2 (ACIGS) absorbers. We report the Ag alloying effect on compositional, structural, and optoelectronic properties of absorbers. We demonstrate suppressed bulk recombination and improved carrier lifetime in ACIGS, as a result of improved grain size, porosity reduction and defect passivation. We also show that Ag alloying flattens the Ga gradient. Consideration of this impact of Ag will be necessary in future engineering of the Ga profile to maximize charge carrier collection and avoid interface recombination. Exploiting the beneficial effects of Ag alloying, we report a wide bandgap (1.58 eV) ACIGS solar cell with a high power conversion efficiency of 15.5% and a large open-circuit voltage (VOC) of 948 mV, improving on the reference pure CIGS solar cell, with an 11.2% efficiency and an 821 mV VOC. Ag alloying is a useful route to further increase the efficiency of CIGS solar cells and future tandem devices.
format Preprint
id arxiv_https___arxiv_org_abs_2512_01459
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Silver Alloyed Wide Bandgap (Ag,Cu)(In,Ga)S2 Thin Film Solar Cells With 15.5% Efficiency
Hu, Yucheng
Washbrook, Ece
Oli, Arivazhagan Valluvar
Griesi, Andrea
Ivanov, Yurii P.
Pelling, Mariam
Fairclough, Simon M.
Kaur, Kulwinder
Melchiorre, Michele
Hultqvist, Adam
Törndahl, Tobias
Hempel, Wolfram
Witte, Wolfram
Divitini, Giorgio
Siebentritt, Susanne
Oliver, Rachel A.
Kusch, Gunnar
Materials Science
Sulfide chalcopyrite Cu(In,Ga)S2 (CIGS) is a wide bandgap semiconductor suitable for the top cell of a tandem solar device. Here we demonstrate significant improvements in absorber quality by alloying with Ag to form (Ag,Cu)(In,Ga)S2 (ACIGS) absorbers. We report the Ag alloying effect on compositional, structural, and optoelectronic properties of absorbers. We demonstrate suppressed bulk recombination and improved carrier lifetime in ACIGS, as a result of improved grain size, porosity reduction and defect passivation. We also show that Ag alloying flattens the Ga gradient. Consideration of this impact of Ag will be necessary in future engineering of the Ga profile to maximize charge carrier collection and avoid interface recombination. Exploiting the beneficial effects of Ag alloying, we report a wide bandgap (1.58 eV) ACIGS solar cell with a high power conversion efficiency of 15.5% and a large open-circuit voltage (VOC) of 948 mV, improving on the reference pure CIGS solar cell, with an 11.2% efficiency and an 821 mV VOC. Ag alloying is a useful route to further increase the efficiency of CIGS solar cells and future tandem devices.
title Silver Alloyed Wide Bandgap (Ag,Cu)(In,Ga)S2 Thin Film Solar Cells With 15.5% Efficiency
topic Materials Science
url https://arxiv.org/abs/2512.01459