Origin of Bright Quantum Emissions with High Debye-Waller factor in Silicon Nitride
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| Format: | Preprint |
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2025
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| _version_ | 1866908972402868224 |
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| author | Meher, Shibu Dey, Manoj Singh, Abhishek Kumar |
| author_facet | Meher, Shibu Dey, Manoj Singh, Abhishek Kumar |
| contents | Silicon nitride has emerged as a promising photonic platform for integrated single-photon sources, yet the microscopic origin of the recently observed bright quantum emissions remains unclear. Using hybrid density functional theory, we show that the negatively charged N$_\text{Si}$V$_\text{N}$ center (NV$^{-}$) in the C$_{1h}$ configuration exhibits a linearly polarized zero-phonon line (ZPL) at 2.46 eV, with a radiative lifetime of 9.01 ns and a high Debye-Waller (DW) factor of 33%. We further find that the C$_{1h}$ configuration is prone to a pseudo-Jahn-Teller distortion, yielding two symmetrically equivalent defect structures that emit bright, linearly polarized ZPL at 1.80 eV with a lifetime of 10.17 ns and an increased DW factor of 41%. These nitrogen-vacancy-related defects explain the origins of visible quantum emissions, paving the way for deterministic and monolithically integrated silicon-nitride quantum photonics. |
| format | Preprint |
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arxiv_https___arxiv_org_abs_2512_01569 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Origin of Bright Quantum Emissions with High Debye-Waller factor in Silicon Nitride Meher, Shibu Dey, Manoj Singh, Abhishek Kumar Materials Science Silicon nitride has emerged as a promising photonic platform for integrated single-photon sources, yet the microscopic origin of the recently observed bright quantum emissions remains unclear. Using hybrid density functional theory, we show that the negatively charged N$_\text{Si}$V$_\text{N}$ center (NV$^{-}$) in the C$_{1h}$ configuration exhibits a linearly polarized zero-phonon line (ZPL) at 2.46 eV, with a radiative lifetime of 9.01 ns and a high Debye-Waller (DW) factor of 33%. We further find that the C$_{1h}$ configuration is prone to a pseudo-Jahn-Teller distortion, yielding two symmetrically equivalent defect structures that emit bright, linearly polarized ZPL at 1.80 eV with a lifetime of 10.17 ns and an increased DW factor of 41%. These nitrogen-vacancy-related defects explain the origins of visible quantum emissions, paving the way for deterministic and monolithically integrated silicon-nitride quantum photonics. |
| title | Origin of Bright Quantum Emissions with High Debye-Waller factor in Silicon Nitride |
| topic | Materials Science |
| url | https://arxiv.org/abs/2512.01569 |