First-principles band alignment engineering in polar and nonpolar orientations for wurtzite AlN, GaN, and B$_x$Al$_{1-x}$N alloys

Documenti analoghi

• Electronic Properties of Ultra-Wide Bandgap B$_x$Al$_{1-x}$N Computed from First-Principles Simulations
  di: Milne, Cody L., et al.
  Pubblicazione: (2023)
• Electronic Properties of Ultra‐Wide Bandgap BxAl1−xN Computed from First‐Principles Simulations
  di: Cody L. Milne, et al.
  Pubblicazione: (2024)
• Significant impact of Al1-xGaxN interlayer on GaN/AlN thermal boundary conductance
  di: Adnan, Khalid Zobaid, et al.
  Pubblicazione: (2026)
• Impact of AlN buffer thickness on electrical and thermal characteristics of AlGaN/GaN/AlN HEMTs
  di: Kim, Minho, et al.
  Pubblicazione: (2025)
• Shubnikov-de Haas oscillations in coherently strained AlN/GaN/AlN quantum wells on bulk AlN substrates
  di: Chen, Yu-Hsin, et al.
  Pubblicazione: (2025)