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| Main Authors: | , |
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| Format: | Preprint |
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2025
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| Online Access: | https://arxiv.org/abs/2512.02235 |
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| _version_ | 1866917117936271360 |
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| author | Tathfif, Infiter Carter, Samuel G. |
| author_facet | Tathfif, Infiter Carter, Samuel G. |
| contents | The V2 silicon vacancy defect in 4H-SiC has emerged as a promising system for quantum technologies due to its favorable optical and spin properties and the advantages of the SiC host. However, the readout contrast - an important benchmark for quantum sensing - of V2 ensembles for optically-detected magnetic resonance (ODMR) is relatively low, usually <1$\%$ at room temperature. To overcome this challenge, we resonantly excite the V2 ensembles at cryogenic temperatures and compare the results with the off-resonant case. We report a maximum ODMR contrast of 50$\%$ with only 2 $μ$W of resonant laser power, almost 100 times improvement over off-resonant excitation. We attribute this high readout contrast to a subset of V2 centers that have one spin-selective optical transition resonant with the laser. The ODMR contrast decreases with temperature, approaching the non-resonant contrast by 60 K, likely due to broadening of the optical transition linewidths. We achieve a maximum sensitivity of 100 nT/$\sqrt{Hz}$ with a resonant laser power of 300 $μ$W, while 100 times more non-resonant excitation power is needed to achieve comparable sensitivity. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2512_02235 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Enhanced readout contrast of V2 ensembles in 4H-SiC through resonant optical excitation Tathfif, Infiter Carter, Samuel G. Quantum Physics The V2 silicon vacancy defect in 4H-SiC has emerged as a promising system for quantum technologies due to its favorable optical and spin properties and the advantages of the SiC host. However, the readout contrast - an important benchmark for quantum sensing - of V2 ensembles for optically-detected magnetic resonance (ODMR) is relatively low, usually <1$\%$ at room temperature. To overcome this challenge, we resonantly excite the V2 ensembles at cryogenic temperatures and compare the results with the off-resonant case. We report a maximum ODMR contrast of 50$\%$ with only 2 $μ$W of resonant laser power, almost 100 times improvement over off-resonant excitation. We attribute this high readout contrast to a subset of V2 centers that have one spin-selective optical transition resonant with the laser. The ODMR contrast decreases with temperature, approaching the non-resonant contrast by 60 K, likely due to broadening of the optical transition linewidths. We achieve a maximum sensitivity of 100 nT/$\sqrt{Hz}$ with a resonant laser power of 300 $μ$W, while 100 times more non-resonant excitation power is needed to achieve comparable sensitivity. |
| title | Enhanced readout contrast of V2 ensembles in 4H-SiC through resonant optical excitation |
| topic | Quantum Physics |
| url | https://arxiv.org/abs/2512.02235 |