Enhanced readout contrast of V2 ensembles in 4H-SiC through resonant optical excitation

Documenti analoghi

• The influence of nitrogen doping and annealing on the silicon vacancy in 4H-SiC
  di: Carter, Samuel G., et al.
  Pubblicazione: (2025)
• Robust single divacancy defects near stacking faults in 4H-SiC under resonant excitation
  di: He, Zhen-Xuan, et al.
  Pubblicazione: (2024)
• Spectral stability of V2 centres in sub-micron 4H-SiC membranes
  di: Heiler, Jonah, et al.
  Pubblicazione: (2023)
• Theory of optical spin polarization of axial divacancy and nitrogen-vacancy defects in 4H-SiC
  di: Bian, Guodong, et al.
  Pubblicazione: (2024)
• Fluorescence enhancement of single V2 centers in a 4H-SiC cavity antenna
  di: Körber, Jonathan, et al.
  Pubblicazione: (2024)