Accurate Modeling of Gate Leakage Currents in SiC Power MOSFETs

Fuente: arXiv

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Bibliographic Details
Main Authors:	Feng, Ang, Karl, Alexander, Waldhör, Dominic, Avramenko, Marina, Moens, Peter, Grasser, Tibor
Format:	Preprint
Published:	2025
Subjects:	Materials Science Applied Physics
Online Access:	Acceder al recurso
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Internet

https://arxiv.org/abs/2512.02604