Copertina

Accurate Modeling of Gate Leakage Currents in SiC Power MOSFETs

Fuente: arXiv

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Dettagli Bibliografici
Autori principali:	Feng, Ang, Karl, Alexander, Waldhör, Dominic, Avramenko, Marina, Moens, Peter, Grasser, Tibor
Natura:	Preprint
Pubblicazione:	2025
Soggetti:	Materials Science Applied Physics
Accesso online:	Acceder al recurso
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