GaN mid-IR plasmonics: low-loss epsilon-near-zero modes
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arXiv
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| Autores principales: | , , , , , |
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| Formato: | Preprint |
| Publicado: |
2025
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| _version_ | 1866911575373250560 |
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| author | Inglés-Cerrillo, Julia Villanueva-Blanco, Maria Damilano, Benjamin Vézian, Stéphane Bajo, Miguel Montes Hierro, Adrian |
| author_facet | Inglés-Cerrillo, Julia Villanueva-Blanco, Maria Damilano, Benjamin Vézian, Stéphane Bajo, Miguel Montes Hierro, Adrian |
| contents | Epsilon-near-zero (ENZ) materials, defined by $ | Re(ε) | < 1$, enable unique light propagation characteristics, including confinement within sub-wavelength regions. To reduce losses in this regime, materials with both near-zero permittivity and $n<1$ refractive index, known as near-zero-index (NZI) materials, are desired. When both conditions are satisfied, the resulting region is classified as a low-loss ENZ medium combining strong light confinement with reduced optical losses. To achieve this behavior in the mid-IR, heavily doped semiconductors are required, and those compatible with current technologies are most desirable. This work provides the first in-depth study, supported by experimental demonstrations, of the plasmonic properties of highly doped GaN thin films on Si, exhibiting low optical losses and low-loss ENZ characteristics up to $3μm$. From the extracted optical parameters, the ENZ and NZI regions are determined and compared with the existing literature. As a result of the large polar character of nitrides, a hybridization of the surface plasmon and phonon polaritons is observed, accompanied by a flat-dispersion of the high-energy mode (pinned near the plasma frequency) indicative of its ENZ character. Establishing GaN as a viable platform for mid-IR ENZ-based plasmonics paves the way for integration into future infrared photonic technologies. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2512_02632 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | GaN mid-IR plasmonics: low-loss epsilon-near-zero modes Inglés-Cerrillo, Julia Villanueva-Blanco, Maria Damilano, Benjamin Vézian, Stéphane Bajo, Miguel Montes Hierro, Adrian Optics Epsilon-near-zero (ENZ) materials, defined by $ | Re(ε) | < 1$, enable unique light propagation characteristics, including confinement within sub-wavelength regions. To reduce losses in this regime, materials with both near-zero permittivity and $n<1$ refractive index, known as near-zero-index (NZI) materials, are desired. When both conditions are satisfied, the resulting region is classified as a low-loss ENZ medium combining strong light confinement with reduced optical losses. To achieve this behavior in the mid-IR, heavily doped semiconductors are required, and those compatible with current technologies are most desirable. This work provides the first in-depth study, supported by experimental demonstrations, of the plasmonic properties of highly doped GaN thin films on Si, exhibiting low optical losses and low-loss ENZ characteristics up to $3μm$. From the extracted optical parameters, the ENZ and NZI regions are determined and compared with the existing literature. As a result of the large polar character of nitrides, a hybridization of the surface plasmon and phonon polaritons is observed, accompanied by a flat-dispersion of the high-energy mode (pinned near the plasma frequency) indicative of its ENZ character. Establishing GaN as a viable platform for mid-IR ENZ-based plasmonics paves the way for integration into future infrared photonic technologies. |
| title | GaN mid-IR plasmonics: low-loss epsilon-near-zero modes |
| topic | Optics |
| url | https://arxiv.org/abs/2512.02632 |